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Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure

  • Subhashis DasEmail author
  • Ankush Bag
  • Saptarsi Ghosh
  • Satinder K. Sharma
  • Dhrubes Biswas
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

The effect of Si3N4 passivation on the acetone sensing performance of Pd/AlGaN/GaN heterostructure in the temperature range of 100–250 °C has been studied. AlGaN/GaN heterostructure has been grown epitaxially by Plasma Assisted Molecular Beam Epitaxy (PA-MBE). Si3N4 passivation layer has been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). The range of acetone concentration has been taken from 100 to 1000 ppm. A maximum response of 80% has been recorded at the optimum temperature of 150 °C with response and recovery time of 14 and 36 s respectively. Inferior sensing performance has been shown by the passivated sensor structure.

Notes

Acknowledgements

The authors would like to acknowledge the financial support from Science and Engineering Research Board (SERB) file no. PDF/2016/003135 and Ministry of Electronics and Information Technology (MeitY).

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Subhashis Das
    • 1
    Email author
  • Ankush Bag
    • 1
  • Saptarsi Ghosh
    • 2
  • Satinder K. Sharma
    • 1
  • Dhrubes Biswas
    • 3
  1. 1.School of Computing and Electrical EngineeringIndian Institute of Technology MandiMandiIndia
  2. 2.Solid State Physics LaboratoryTimarpurIndia
  3. 3.Advanced Technology Development Centre, Indian Institute of Technology KharagpurKharagpurIndia

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