Effect of Si3N4 Passivation on the Acetone Sensing Performance of Pd/AlGaN/GaN Heterostructure
The effect of Si3N4 passivation on the acetone sensing performance of Pd/AlGaN/GaN heterostructure in the temperature range of 100–250 °C has been studied. AlGaN/GaN heterostructure has been grown epitaxially by Plasma Assisted Molecular Beam Epitaxy (PA-MBE). Si3N4 passivation layer has been deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). The range of acetone concentration has been taken from 100 to 1000 ppm. A maximum response of 80% has been recorded at the optimum temperature of 150 °C with response and recovery time of 14 and 36 s respectively. Inferior sensing performance has been shown by the passivated sensor structure.
The authors would like to acknowledge the financial support from Science and Engineering Research Board (SERB) file no. PDF/2016/003135 and Ministry of Electronics and Information Technology (MeitY).
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