Advertisement

Design and Simulation of SOI-ISFET Macromodel Using SPICE

  • Mohit PadhyeEmail author
  • Soumendu Sinha
  • Rishi Sharma
  • Ravindra Mukhiya
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

A behavioral macromodel of SOI-ISFET has been developed in HSPICE® to simulate the electrolyte-oxide-semiconductor structure of ISFET in a solution, with an additional membrane layer. The dual-gate effect of the SOI-ISFET has been simulated and enhanced sensitivity was obtained for different sensing films. The effect of gate oxide and buried oxide thicknesses on the dual-gate sensitivity has been studied and the obtained results are in accordance with the available literature.

Notes

Acknowledgements

The authors would like to acknowledge Director, CSIR-Central Electronics Engineering Research Institute for his valuable support. Mohit would like to give sincere thanks to Director, CSIR-CEERI, Pilani, for granting permission to work in the institute. The authors are very grateful to all the scientists and technical officers in Smart Sensors Area, CSIR-CEERI, Pilani, for their constant support and motivation.

References

  1. 1.
    P. Bergveld, Thirty years of ISFETOLOGY-What happened in the past 30 years and what may happen in the next 30 years. Sens. Actuators B Chem. 88, 1–20 (2003)CrossRefGoogle Scholar
  2. 2.
    S. Sinha, R. Rathore, S.K. Sinha, R. Sharma, R. Mukhiya, V.K. Khanna, Modeling and simulation of ISFET microsensor for different sensing films, in ISSS International Conference on Smart Materials Structure and Systems (2014)Google Scholar
  3. 3.
    H.J. Jang, W.-J. Cho, High performance silicon-on-insulator based ion-sensitive field-effect transistor using high-k stacked oxide sensing membrane. Appl. Phys. Lett. 99(4), 043703 (2011)ADSCrossRefGoogle Scholar
  4. 4.
    P. Fernandes, H. Stiegler, M. Zhao, K.D. Cantley, B. Obradovic, R.A. Chapman, H. Wen, G. Mahmud, E.M. Vogel, SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors. Sens. Actuators B Chem. 161(1), 163–170 (2012)CrossRefGoogle Scholar
  5. 5.
    S. Khandelwal, Y.S. Chauhan, D.D. Lu, S. Venugopalan, M.A. Ul Karim, A.B. Sachid, B.Y. Nguyen, BSIM-IMG: a compact model for ultrathin-body SOI MOSFETs with back-gate control. IEEE Trans. Electron Devices 59(8), 2019–2026 (2012)ADSCrossRefGoogle Scholar
  6. 6.
    S. Martinoia, G. Massobrio, L. Lorenzelli, Modeling ISFET microsensor and ISFET-based microsystems: a review. Sens. Actuators B Chem. 105, 14–27 (2005)CrossRefGoogle Scholar
  7. 7.
    H.J. Jang, W.-J. Cho, Performance enhancement of capacitive-coupling dual-gate ion-sensitive field-effect transistor in ultra-thin body. Sci. Rep. 4, Article number: 5284 (2014)Google Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Mohit Padhye
    • 1
    Email author
  • Soumendu Sinha
    • 2
    • 3
  • Rishi Sharma
    • 2
    • 3
  • Ravindra Mukhiya
    • 2
    • 3
  1. 1.Birla Institute of Technology and Science (BITS)PilaniIndia
  2. 2.CSIR-Central Electronics Engineering Research Institute (CEERI)PilaniIndia
  3. 3.Academy of Scientific and Innovative Research (AcSIR)ChennaiIndia

Personalised recommendations