Dielectric Modulated AlGaAs/GaAs HEMT for Label Free Detection of Biomolecules
This paper presents a dielectric modulated high electron mobility transistor (HEMT) for label free detection of biomolecules. For analysis of biomolecules, an immobilization site has been created at the gate by carving a nano-gap in the gate oxide. This carved nano-gap acts as the binding site for biomolecules and changes the dielectric behavior of the gate oxide hence changing the characteristics of the proposed structure. The sensing parameter used is the threshold voltage which showed variation after application of immobilized biomolecules at the binding site. Simulation has been carried out for neutral and charged biomolecules using Silvaco TCAD.
The authors acknowledge TEQIP-II for facilitating Silvaco TCAD tool in Department of ECE, NIT Silchar for carrying out the research work.
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