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Effect of Gate Dielectric Material on the Analog Performance of a Ge-Source Tunnel FET

  • Emona DattaEmail author
  • Avik Chattopadhyay
  • Abhijit Mallik
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 215)

Abstract

In this paper, a detailed investigation of the effects of varying dielectric constant of the gate dielectric on the analog performance of a tunnel FET is reported. Variation in gate dielectric constant is made for both constant physical thickness and constant effective oxide thickness (EOT). A high-k gate dielectric is found to yield improved analog performance when physical thickness is kept constant, which is due to increased gate capacitance. On the other hand, a low-k gate dielectric delivers better analog performance when EOT is kept constant.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Emona Datta
    • 1
    Email author
  • Avik Chattopadhyay
    • 2
  • Abhijit Mallik
    • 1
  1. 1.Electronic Science DepartmentUniversity of CalcuttaKolkataIndia
  2. 2.Radio Physics and Electronics DepartmentUniversity of CalcuttaKolkataIndia

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