Atomic Arrangement and In Composition in InGaN Quantum Wells

Chapter
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 269)

Abstract

In this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.

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© Springer International Publishing AG, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Research Institutes for Applied MechanicsKyushu UniversityFukuokaJapan

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