Epitaxial Growth of III-Nitride Compounds pp 55-92 | Cite as
Fundamental Properties of III-Nitride Surfaces
Chapter
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Abstract
The control of growth conditions is one of the important factors for fabricating high-quality crystals and would be achieved through the understanding of surface reconstructions. It is well known that reconstructed structures appear on the growth front (surfaces) of semiconductor materials, so that investigations for the reconstructions on III-nitride surfaces are necessary from theoretical viewpoints taking growth conditions into account.
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