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Amorphous/Crystalline Si Heterojunction Solar Cells

  • Hiroyuki FujiwaraEmail author
Chapter
Part of the Springer Series in Optical Sciences book series (SSOS, volume 212)

Abstract

For characterization of hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction structures, spectroscopic ellipsometry (SE) has been applied extensively. The ellipsometry method is particularly powerful for the determination of quite thin a-Si:H structures (~50 Å) incorporated into the devices. In a-Si:H/c-Si heterojunction solar cells, the formation of ideal a-Si:H/c-Si interface is critical to achieve high conversion efficiencies. For the detection of unfavorable interface formation, such as epitaxial growth of intended a-Si:H layers, SE provides an easy and quick tool. In this chapter, we will overview the ellipsometry analysis of a-Si:H layers formed on c-Si substrates. The analysis examples for detrimental Si epitaxial growth that occurs rather easily at low process temperatures are also presented. This chapter further addresses the interpretation of a-Si:H dielectric functions based on local amorphous networks. The variation of optical constants in a-SiO:H and a-SiC:H alloys, which have been applied to c-Si heterojunction solar cells, is also reviewed in this chapter.

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Authors and Affiliations

  1. 1.Gifu UniversityGifuJapan

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