Fabrication and Characterizations of Bi2Te3 Based Topological Insulator Nanomaterials

  • Z. H. Wang
  • Xuan P. A. Gao
  • Z. D. Zhang


In this manuscript, recent experimental research progresses in topological insulators Bi2Se3 and Bi2Te3 based nanostructures are presented, with a focus on nanoflakes, nanoplates, nanosheets, nanowires, and thin films of Bi2Te3 based topological insulator materials. Among the various synthesis methods, the chemical vapor deposition (CVD) method is described here as an example for the synthesis of topological insulator nanomaterials. The Raman spectroscopy and electrical transport characterizations are discussed on a few different types of topological insulators, such as binary/ternary/quaternary compound and elementally-doped nanostructures and films.


Topological Insulator Dirac Point Hall Resistance Bulk Carrier Back Gate Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors thank Rui He, CheeHuei Lee, Dong Liang, Richard L.J. Qiu, Mohan Sankaran, Hao Tang for collaborations. Z.D. Zhang and Z.H. Wang thank the National Natural Science Foundation of China with Grant No. 51331006 and 51522104. X.P.A. Gao thanks the National Science Foundation (DMR-1151534) of U.S. for funding support.


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Copyright information

© Springer International Publishing AG 2017

Authors and Affiliations

  1. 1.Shenyang National Laboratory for Materials Science, Institute of Metal ResearchChinese Academy of SciencesShenyangPeople’s Republic of China
  2. 2.Department of PhysicsCase Western Reserve UniversityClevelandUSA

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