TCAD Simulation of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

  • Jorge Martins
  • Pedro Barquinha
  • João Goes
Part of the IFIP Advances in Information and Communication Technology book series (IFIPAICT, volume 470)


Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are simulated using TCAD software. Nonlinearities observed in fabricated devices are obtained through simulation and corresponding physical characteristics are further investigated. For small channel length (below 1 µm) TFTs’ simulations show short channel effects, namely drain-induced barrier lowering (DIBL), and effectively source-channel barrier is shown to decrease with drain bias. Simulations with increasing shallow donor-like states result in transfer characteristics presenting hump-like behavior as typically observed after gate bias stress. Additionally, dual-gate architecture is simulated, exhibiting threshold voltage modulation by the second gate biasing.





This work is funded by FEDER funds through the COMPETE 2020 Programme and National Funds through FCT - Portuguese Foundation for Science and Technology under the Project Nos. UID/CTM/50025/2013 and EXCL/CTM-NAN/0201/2012. The work has also received funding from the European Communities 7th Framework Programme under grant agreement ICT-2013-10-611070 (i-FLEXIS project) and from H2020 program under ICT-03-2014-644631 (ROLL-OUT project).


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© IFIP International Federation for Information Processing 2016

Authors and Affiliations

  1. 1.i3N/CENIMAT, Department of Materials Science, Faculty of Science and TechnologyUniversidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de CaparicaCaparicaPortugal
  2. 2.CTS-UNINOVA, Departamento de Engenharia Electrotécnica, Faculdade de Ciências e TecnologiaUniversidade Nova de LisboaCaparicaPortugal

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