Heat and Light Intensity Influence on (I–V) Characterization of Cu2S Film/p-Si Heterojunction
Cuprous sulphide was deposited on p-type silicon substrate by thermal evaporation techniques, to form a Cu2S film/p-Si heterojunction, and deposited on glass to measure the thermoelectric power. The thickness of the Cu2S film is d = 113 nm, the structure of the Cu2S thin film was investigated by X-ray diffraction. Surface morphology and grain size were obtained by transmission electron microscopy. The thermoelectric power of the Cu2S thin film was obtained and the Seeback effect was positive, which refers to a p-type semiconductor. Current–voltage (I–V) characteristics in the dark at temperatures ranging from 393 to 373 K were investigated. I–V characteristics in illuminance at light intensities from 1400 to 22,000 lx were investigated by changing the distance between the light source and the sample.
KeywordsI–V characteristics of Cu2S film/p-Si Thermal evaporation
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