Silicene pp 129-140 | Cite as

Interaction Between Silicene and Non-metallic Surfaces

  • Michel Houssa
  • André Stesmans
  • Valeri V. Afanas’ev
Chapter
First Online:
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 235)

Abstract

Silicene has so far been successfully grown on metallic substrates, like Ag(111), ZrB2(0001) and Ir(111) surfaces. However, characterization of its electronic structure is hampered by the metallic substrate. In addition, potential applications of silicene in nanoelectronic devices will require its growth/integration with semiconducting or insulating substrates. In this chapter, we review recent theoretical works about the interaction of silicene with several non-metallic templates, distinguishing between the weak van der Waals like interaction of silicene with e.g. AlN or layered metal (di)chalcogenides, and the stronger covalent bonding between silicene and e.g. ZnS surfaces. Recent experimental results on the possible growth of silicene on MoS2 are also highlighted and compared to the theoretical predictions.

Keywords

Silicene Layer Dirac Cone Transition Metal Dichalcogenides Semiconducting Transition Metal Gapless Semiconductor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Notes

Acknowledgments

This work has been financially supported by the European Project 2D-NANOLATTICES, within the Future and Emerging Technologies (FET) program of the European Commission, under the FET-grant number 270749, as well as the KU Leuven Research Funds, project GOA/13/011. We are grateful to A. Molle (MDM Laboratory), A. Dimoulas (NCSR Demokritos), G. Pourtois (imec), E. Scalise (Max Planck Institute), B. van den Broek and K. Iordanidou, (KU Leuven) for their valuable contributions to this work and for stimulating discussions.

References

  1. 1.
    P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M.C. Asensio, A. Resta, B. Ealet, G. Le Lay, Phys. Rev. Lett. 108, 155501 (2012)CrossRefGoogle Scholar
  2. 2.
    B. Feng, Z. Ding, S. Meng, Y. Yao, X. He, P. Cheng, L. Chen, K. Wu, Nano Lett. 12, 3507 (2012)CrossRefGoogle Scholar
  3. 3.
    D. Chiappe, C. Grazianetti, G. Tallarida, M. Fanciulli, A. Molle, Adv. Mat. 24, 5088 (2012)CrossRefGoogle Scholar
  4. 4.
    H. Enriquez, S. Vizzini, A. Kara, B. Lalmi H. Oughaddou. J. Phys. Condens. Matter 24, 314211 (2012)Google Scholar
  5. 5.
    D. Tsoutsou, E. Xenogiannopoulou, E. Golias, P. Tsipas, A. Dimoulas, Appl. Phys. Lett. 103, 231604 (2013)CrossRefGoogle Scholar
  6. 6.
    P. Moras, T.O. Mentes, P.M. Sheverdyaeva, A. Locatelli, C. Carbone, J. Phys. Condens. Matter 26, 185001 (2014)CrossRefGoogle Scholar
  7. 7.
    A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, Y. Takamura, Phys. Rev. Lett. 108, 245501 (2012)CrossRefGoogle Scholar
  8. 8.
    C.C. Lee, A. Fleurence, Y. Yamada-Takamura, T. Ozaki, R. Friedlein, Phys. Rev. B 90, 075422 (2014)CrossRefGoogle Scholar
  9. 9.
    L. Meng, Y. Wang, L. Zhang, S. Du, R. Wu, L. Li, Y. Zhang, G. Li, H. Zhou, W.A. Hofer, M.J. Gao, Nano Lett. 13, 685 (2013)CrossRefGoogle Scholar
  10. 10.
    L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, M. Dubey, A. Molle, D. Akinwande, Nature Nanotech. 10, 227 (2015)CrossRefGoogle Scholar
  11. 11.
    M. Houssa, G. Pourtois, V.V. Afanas’ev, A. Stesmans. Appl. Phys. Lett. 97, 112106 (2010)Google Scholar
  12. 12.
    M. Houssa, G. Pourtois, M.M. Heyns, V.V. Afanas’ev, A. Stesmans. J. Electrochem. Soc. 158, H107 (2011)Google Scholar
  13. 13.
    Y. Ding, Y. Wang, Appl. Phys. Lett. 103, 043114 (2013)CrossRefGoogle Scholar
  14. 14.
    E. Scalise, M. Houssa, E. Cinquanta, C. Grazianetti, B. van den Broek, G. Pourtois, A. Stesmans, M. Fanciulli. A. Molle, 2D Mater. 1, 011010 (2014)Google Scholar
  15. 15.
    L.Y. Li, M.W. Zhao, J. Phys. Chem. C 118, 19129 (2014)CrossRefGoogle Scholar
  16. 16.
    J.J. Zhu, U. Schwingenschlögl, ACS Appl. Mat. Interf. 6, 11675 (2014)CrossRefGoogle Scholar
  17. 17.
    L. Linyang, W. Xiaopeng, Z. Xiaoyang, Z. Mingwen, Phys. Lett. A 377, 2628 (2013)CrossRefGoogle Scholar
  18. 18.
    S. Kokott, P. Pflugradt, L. Matthes, F. Bechstedt, J. Phys. Condens. Matter 26, 185002 (2014)CrossRefGoogle Scholar
  19. 19.
    M. Badylevich, S. Shamuilia, V.V. Afanas’ev, A. Stesmans, Y.G. Fedorenko, C. Zhao. J. Appl. Phys. 104, 093713 (2008)Google Scholar
  20. 20.
    Y.-N. Xu, W.Y. Ching, Phys. Rev. B 48, 4335 (1993)CrossRefGoogle Scholar
  21. 21.
    C.L. Freeman, F. Claeyssens, N.L. Allan, J.H. Harding, Phys. Rev. Lett. 96, 066102 (2006)CrossRefGoogle Scholar
  22. 22.
    P. Tsipas, S. Kassavetis, D. Tsoutsou, E. Xenogiannopoulou, E. Golias, S.A. Giamini, C. Grazianetti, D. Chiappe, A. Molle, M. Fanciulli, A. Dimoulas, Appl. Phys. Lett. 103, 251605 (2013)CrossRefGoogle Scholar
  23. 23.
    S.S. Cahangirov, M. Topsakal, E. Aktürk, H. Sahin, S. Ciraçi. Phys. Rev. Lett 102, 236804 (2009)Google Scholar
  24. 24.
    D. Chiappe, E. Scalise, E. Cinquanta, C. Grazianetti, B. van den Broek, M. Fanciulli, M. Houssa A. Molle. Adv. Mat. 26, 2096 (2014)Google Scholar
  25. 25.
    L.C. Lew Yan Voon, E. Sandberg, R.S. Aga, A.A. Farajian. Appl. Phys. Lett. 97, 163114 (2010)Google Scholar
  26. 26.
    M. Houssa, E. Scalise, K. Sankaran, G. Pourtois, V.V. Afanas’ev, A. Stesmans. Appl. Phys. Lett. 98, 223107 (2011)Google Scholar
  27. 27.
    R. Quhe, R. Fei, Q. Liu, J. Zheng, H. Li, C. Xu, Z. Ni, Y. Wang, D. Yu, Z. Gao, J. Lu. Sci. Rep. 2, 853 (2012)Google Scholar
  28. 28.
    Y. Ding, Y. Wang, Appl. Phys. Lett. 100, 083102 (2012)CrossRefGoogle Scholar
  29. 29.
    B. van den Broek, M. Houssa, E. Scalise, G. Pourtois, V.V. Afanas’ev, A. Stesmans. Appl. Surf. Sci. 291, 104 (2014)Google Scholar
  30. 30.
    T.P. Kaloni, N. Singh, U. Schwingenschlögl, Phys. Rev. B 89, 035409 (2014)CrossRefGoogle Scholar
  31. 31.
    M. Houssa, B. van den Broek, E. Scalise, G. Pourtois, V.V. Afanas’ev, A. Stesmans. Phys. Chem. Chem. Phys. 15, 3702 (2013)Google Scholar
  32. 32.
    S.S. Li, C.W. Zhang, S.S. Yan, S.J. Hu, W.X. Ji, P.J. Wang, P. Li, J. Phys. Condens. Matter 26, 395003 (2014)CrossRefGoogle Scholar
  33. 33.
    M.J. Weber (ed.) Handbook of Laser Science and Technology (CRC Press, Cleveland, 1986)Google Scholar
  34. 34.
    Y.-N. Xu, W.Y. Ching, Phys. Rev. B 48, 4335 (1993)CrossRefGoogle Scholar
  35. 35.
    J.E. Northrup, J. Neugebauer. Phys. Rev. B 53, R10477 (1996)CrossRefGoogle Scholar
  36. 36.
    A. Filippetti, V. Fiorentini, G. Cappellini, A. Bosin, Phys. Rev. B 59, 8026 (1999)CrossRefGoogle Scholar
  37. 37.
    X. Zhang, H. Zhang, T. He, M. Zhao, J. Appl. Phys. 108, 064317 (2010)CrossRefGoogle Scholar
  38. 38.
    A. Wander, F. Schedin, P. Steadman, A. Norris, R. McGrath, T.S. Turner, G. Thornton, N.M. Harrison, Phys. Rev. Lett. 86, 3811 (2001)CrossRefGoogle Scholar
  39. 39.
    B. Meyer, D. Marx, Phys. Rev. B 67, 035403 (2003)CrossRefGoogle Scholar
  40. 40.
    M. Houssa, B. van den Broek, E. Scalise, G. Pourtois, V.V. Afanas’ev, A. Stesmans. ECS Trans. 53, 51 (2013)Google Scholar

Copyright information

© Springer International Publishing Switzerland 2016

Authors and Affiliations

  • Michel Houssa
    • 1
  • André Stesmans
    • 1
  • Valeri V. Afanas’ev
    • 1
  1. 1.Department of Physics and AstronomyUniversity of LeuvenLeuvenBelgium

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