International Conference on Large-Scale Scientific Computing

Large-Scale Scientific Computing pp 285-292 | Cite as

Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach

  • Joydeep Ghosh
  • Dmitry Osintsev
  • Viktor Sverdlov
  • Josef Weinbub
  • Siegfried Selberherr
Conference paper
Part of the Lecture Notes in Computer Science book series (LNCS, volume 9374)

Abstract

Silicon, the prominent material of microelectronics, is perfectly suited for spin-driven applications because of the weak spin-orbit interaction resulting in long spin lifetime. However, additional spin relaxation on rough interfaces and acoustic phonons may strongly decrease the spin lifetime in modern silicon-on-insulator and trigate transistors. Because of the need to perform numerical calculation and appropriate averaging of the strongly scattering momenta depending spin relaxation rates, an evaluation of the spin lifetime in thin silicon films becomes prohibitively computationally expensive. We use a highly parallelized approach to calculate the spin lifetime in silicon films. Our scheme is based on a hybrid parallelization approach, using the message passing interface MPI and OpenMP. The algorithm precalculates wave functions and energies, and temporarily stores the results in a file-based cache to reduce memory consumption. Using the precalculated data for the spin relaxation rate calculations drastically reduces the demand on computational time. We show that our approach offers an excellent parallel speedup, and we demonstrate that the spin lifetime in strained silicon films is enhanced by several orders of magnitude.

References

  1. 1.
    Huang, B., Monsma, D.J., Appelbaum, I.: Coherent spin transport through a 350 micron thick silicon wafer. Phys. Rev. Lett. 99, 177209 (2007)CrossRefGoogle Scholar
  2. 2.
    Li, J., Appelbaum, I.: Modeling spin transport in electrostatically-gated lateral-channel silicon devices: role of interfacial spin relaxation. Phys. Rev. B 84, 165318 (2011)CrossRefGoogle Scholar
  3. 3.
    Li, P., Dery, H.: Spin-orbit symmetries of conduction electrons in silicon. Phys. Rev. Lett. 107, 107203 (2011)CrossRefGoogle Scholar
  4. 4.
    Fischetti, M.V., Ren, Z., Solomon, P.M., Yang, M., Rim, K.: Six-band \({\mathbf{k \cdot p}}\) calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. Phys. Rev. Lett. 94, 1079 (2003)Google Scholar
  5. 5.
    Song, Y., Dery, H.: Analysis of phonon-induced spin relaxation processes in silicon. Phys. Rev. B 86, 085201 (2012)CrossRefGoogle Scholar
  6. 6.
    Osintsev, D., Sverdlov, V., Neophytou, N., Selberherr, S.: Valley splitting and spin lifetime enhancement in strained thin silicon films. In: Proceedings IWCE (2014) ISBN:9781479954346Google Scholar
  7. 7.
    Vienna Scientific Cluster: http://www.vsc.ac.at/systems/vsc-2/
  8. 8.
    Dery, H., Song, Y., Li, P., Zutic, I.: Silicon spin communication. Appl. Phys. Lett. 99, 082502 (2011)CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  • Joydeep Ghosh
    • 1
  • Dmitry Osintsev
    • 1
  • Viktor Sverdlov
    • 1
  • Josef Weinbub
    • 1
  • Siegfried Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU WienViennaAustria

Personalised recommendations