Abstract
Semiconductor spintronics is promising, because it allows creating microelectronic elements which are smaller and consume less energy than present charge-based devices. Silicon is the main element of modern charge-based electronics, thus, understanding the peculiarities of spin propagation in silicon is the key for designing novel devices. We investigate the electron momentum and the spin relaxation in thin (001) oriented SOI films using a k ⋅ p-based approach with spin degree of freedom properly included. We demonstrate that shear strain routinely used to enhance the electron mobility can boost the spin lifetime by an order of magnitude.
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References
Song, Y., Dery, H.: Analysis of phonon-induced spin relaxation processes in silicon. Phys. Rev. B 86, 085201 (2012)
Li, P., Dery, H.: Spin-orbit symmetries of conduction electrons in silicon. Phys. Rev. Lett. 107, 107293 (2011)
Li, J., Appelbaum, I.: Lateral spin transport through bulk silicon. Appl. Phys. Lett. 100 (16) (2012), http://dx.doi.org/10.1063/1.4704802
Fischetti, M.V., Ren, Z., Solomon, P.M., Yang, M., Rim, K.: Six-band k ⋅p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. J. Appl. Phys. 94(2), 1079–1095 (2003)
Osintsev, D., Baumgartner, O., Stanojevic, Z., Sverdlov, V., Selberherr, S.: Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs. Solid State Electron. 90, 34–38 (2013)
Osintsev, D., Sverdlov, V., Selberherr, S.: Reduction of momentum and spin relaxation rate in strained thin silicon films. In: Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC), pp. 334–337 (2013)
Acknowledgements
This work is supported by the European Research Council through the grant #247056 MOSILSPIN. The computational results have been achieved in part using the Vienna Scientific Cluster (VSC).
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Osintsev, D., Sverdlov, V., Selberherr, S. (2016). Electron Momentum and Spin Relaxation in Silicon Films. In: Russo, G., Capasso, V., Nicosia, G., Romano, V. (eds) Progress in Industrial Mathematics at ECMI 2014. ECMI 2014. Mathematics in Industry(), vol 22. Springer, Cham. https://doi.org/10.1007/978-3-319-23413-7_96
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DOI: https://doi.org/10.1007/978-3-319-23413-7_96
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