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Memristor SPICE Model Simulation and Device Hardware Correlation

  • Robinson E. PinoEmail author
  • Antonio S. Oblea
  • Kristy A. Campbell
Chapter
Part of the Advances in Information Security book series (ADIS, volume 61)

Abstract

The memristor device was first described in 1971 by Leon Chua [1] as the fourth basic circuit element. Recently, the memristor has received much attention since the publication of the paper titled “The missing memristor found” in 2008 describing the memristive characteristics of metal-oxide-based memristor devices [2]. The memristor name is a contraction for memory resistor [1]. It is a two terminal passive device whose resistance state depends on its previous state. Given their two terminal structural simplicity and electronic passivity, the applications for memristor technology range from non-volatile memory, instant on computers, reconfigurable electronics and neuromorphic computing [3, 4]. Several device models have been presented to describe the electrical behavior of memristor devices [1, 2, 4–6]. However, there is no paper to the best of our knowledge in the published literature that shows model versus hardware plot correlations within a SPICE microelectronics industry standard environment. Recently, we developed an empirical model that accurately describes the electrical behavior of ion-conductor chalcogenide-based memristors [7]. In this work, we present a SPICE-based version of our memristor device compact model.

Keywords

Compact Model High Resistance State Memristor Device Spice Model Memory Resistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. 1.
    L. Chua, “Memristor - The Missing Circuit Element,” IEEE Transactions on Circuits Theory (IEEE), vol. 18, no. 5, 1971, pp. 507–519.CrossRefGoogle Scholar
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    D. B. Strukov, G. S. Snider, D. R. Stewart and R. S. Williams, “The missing memristor found,” Nature, vol. 453, 2008, pp. 80-83.CrossRefGoogle Scholar
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    L. Chua and S.M. Kang, “Memristive Device and Systems,” Proceedings of IEEE, Vol. 64, no. 2, 1976, pp. 209-223.MathSciNetCrossRefGoogle Scholar
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    Z. Biolek, D. Biolek, V. Biolková, “Spice Model of Memristor With Nonlinear Dopant Drift,” Radioengineering, vol. 18, no. 2, 2009, pp. 210-214.Google Scholar
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    R.E. Pino, J.W. Bohl, N. McDonald, B. Wysocki, P. Rozwood, K.A. Campbell, A.S. Oblea, and A. Timilsina, “Compact Method for Modeling and Simulation of Chalcogenide Based Memristor Devices,” IEEE/ACM International Symposium on Nanoscale Architectures 2010, Anaheim, CA, June 17-18, 2010.Google Scholar
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    A.S. Oblea, A. Timilsina, D. Moore, and K.A. Campbell, “Silver Chalcogenide Based Memristor Devices,” 2010 IEEE World Congress on Computational Intelligence, Barcelona, Spain, July 18-23, 2010.Google Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Robinson E. Pino
    • 1
    Email author
  • Antonio S. Oblea
    • 2
  • Kristy A. Campbell
    • 2
  1. 1.U.S. Department of EnergyOffice of ScienceWashington, DCUSA
  2. 2.Department of Electrical and Computer EngineeringBoise State UniversityBoiseUSA

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