Circuit Reliability: Hot-Carrier Stress of MOS Transistors in Different Fields of Application

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Abstract

This work classifies hot-carrier stress (HCS) and negative- & positive-bias temperature instability (N/PBTI) in the larger context of circuit and product aging. The area of conflict regarding the importance of HCS and N/PBTI will be evaluated. Different fields of applications will be discussed. Some typical examples will illuminate in each case if one damage mechanism dominates the degradation. The root cause for the occurring proportion of HCS and N/PTBI will be explained. Specific characteristics of applications, circuits, and operation conditions leading to an outbalance of HCS or N/PBTI will be examined. Finally, this chapter will evaluate if a general trend for a dominating MOSFET degradation mechanism is observable.

Keywords

Dielectric Breakdown Combinational Logic SRAM Cell Switching Curve Static Noise Margin 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer International Publishing Switzerland 2015

Authors and Affiliations

  1. 1.Infineon Technologies AGNeubibergGermany

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