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Unfolding the Threshold Switching Behavior of a Memristor

  • Stefan Slesazeck
  • Alon Ascoli
  • Hannes Mähne
  • Ronald Tetzlaff
  • Thomas Mikolajick
Part of the Communications in Computer and Information Science book series (CCIS, volume 438)

Abstract

Employing a mathematical model based upon Chua’s unfolding theorem, some aspects of the nonlinear dynamics of a thermally-activated micro-scale NbO x /Nb 2 O 5 volatile memristor were modeled. Insights into the peculiar behavior of the device are gained through experiments and model-based simulations. Particularly, this enables us to reproduce its threshold switching behavior under quasi-static excitation, and to explain under which conditions the off-to-on switching is accompanied by the appearance of a negative differential resistance region on its current-voltage characteristic.

Keywords

Memristor Unfolding Theorem Nonlinear Dynamics Threshold switching Local activity 

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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Stefan Slesazeck
    • 1
  • Alon Ascoli
    • 2
  • Hannes Mähne
    • 1
  • Ronald Tetzlaff
    • 2
  • Thomas Mikolajick
    • 1
    • 3
  1. 1.NaMLab gGmbH Nano-electronic Materials LaboratoryDresdenDeutschland
  2. 2.Institut für Grundlagen der Elektrotechnik und ElektronikTechnische Universität DresdenDresdenDeutschland
  3. 3.Institut für Halbleiter- und MikrosystemtechnikTechnische Universität DresdenDresdenDeutschland

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