The Application of Level Set Method for Simulation of PECVD/LPCVD Processes

  • Sajal Sagar SinghEmail author
  • Yuan Li
  • Yan Xing
  • Prem Pal
Conference paper
Part of the Environmental Science and Engineering book series (ESE)


In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as re-deposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.


CVD Level set 


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This work was supported by research grant from NSFC No. 51075073, China and Department of Science and Technology (Project No. SR/S3/MERC/072/2011), New Delhi, India.


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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  • Sajal Sagar Singh
    • 1
    Email author
  • Yuan Li
    • 2
  • Yan Xing
    • 2
  • Prem Pal
    • 1
  1. 1.MEMS and Micro/Nano Systems LaboratoryIndian Institute of TechnologyHyderabadIndia
  2. 2.Laboratory of Micro-Nano Medical Device, Department of Mechanical EngineeringSoutheast UniversityNanjingChina

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