Abstract
A technique for extracting Statistical Compact Model (SCM) parameters for skewed Gaussian parameters is proposed. Existing techniques handle non-Gaussian variations through non-linearity in model equations. However, hardware data on certain technologies suggest that non-Gaussian variations are observed even on linear parameters like Idlin/Idsat. We propose to model such variations through skewed Gaussian random variables. Analytical expressions for the statistics of the skewed Gaussian process and performance parameters are derived. SCM parameters are extracted by setting up a skewed back propagation of variance (SBPV) algorithm.
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© 2014 Springer International Publishing Switzerland
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Janakiraman, V., Pandharpure, S.J., Watts, J. (2014). Statistical Compact Model Extraction for Skewed Gaussian Variations. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_51
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DOI: https://doi.org/10.1007/978-3-319-03002-9_51
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
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