Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature
In this paper, we numerically study the discrete-dopant-induced characteristic fluctuations in 16nm silicon-on-insulator (SOI) FinFETs. For devices under different temperature condition, discrete dopants are statistically generated and positioned into the three-dimensional channel region to examine associated carrier transportation characteristics, concurrently capturing “dopant concentration variation” and “dopant position fluctuation”. Electrical characteristics’ fluctuations are growing worse when the substrate temperature increases, the standard deviation of threshold voltage increases 1.75 times when substrate temperature increases from 300K to 400K for example. This “atomistic” device simulation technique is computationally cost-effective and provides us an insight into the problem of discrete-dopant-induced fluctuation and the relation between the fluctuation and thermal effect.
KeywordsSubstrate Temperature Threshold Voltage Substrate Temperature Increase Semiconductor Process Characteristic Fluctuation
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