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A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping

  • Viktor SverdlovEmail author
  • Siegfried Selberherr
Conference paper
  • 23 Downloads
Part of the Lecture Notes in Computer Science book series (LNCS, volume 11958)

Abstract

Monte Carlo methods are convenient to model the electron transport due to single electron hopping. The algorithm allows to incorporate a restriction that due to the Coulomb repulsion each trap can only be occupied by a single electron. With electron spin gaining increasing attention, the trap-assisted electron transport has to be generalized to include the electron spin, especially in the presence of an external magnetic field and with transport between ferromagnetic contacts. An innovative Monte Carlo method to deal with the spin-dependent hopping is presented. When the electron spin is taken into account, the escape transition rates are described by transition matrices which describe the coupled spin and occupation relaxation from the trap. The transport process is represented by a cyclic repetition of consecutive electron hops from the source to a trap and from the trap to the drain. The rates do not depend on the previous hops nor on time. The method allows to evaluate the electron current as well as the low frequency current noise at spin-dependent hopping. Our Monte Carlo approach resolves a controversy between theoretical results found in literature.

Notes

Acknowledgements

The financial support by the Austrian Federal Ministry for Digital and Economic Affairs and the National Foundation for Research, Technology and Development is gratefully acknowledged.

References

  1. 1.
    Wang, Y., Sahin-Tiras, K., Harmon, N.J., Wohlgenannt, M., Flatt, M.E.: Immense magnetic response of exciplex light emission due to correlated spin-charge dynamics. Phys. Rev. X 6, 011011 (2016)Google Scholar
  2. 2.
    Song, Y., Dery, H.: Magnetic-field-modulated resonant tunneling in ferromagnetic-insulator-nonmagnetic junctions. Phys. Rev. Lett. 113, 047205 (2014)CrossRefGoogle Scholar
  3. 3.
    Yue, Z., Prestgard, M.C., Tiwari, A., Raikh, M.E.: Resonant magnetotunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport. Phys. Rev. B 91, 195316 (2015)CrossRefGoogle Scholar
  4. 4.
    Wasshuber, C., Kosina, H., Selberherr, S.: SIMON - a simulator for single-electron tunnel devices and circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 16, 937–944 (1997)CrossRefGoogle Scholar
  5. 5.
    Korotkov, A.N., Likharev, K.K.: Shot noise suppression at one-dimensional hopping. Phys. Rev. B 61, 15975–15987 (2000)CrossRefGoogle Scholar
  6. 6.
    Halbekorn, R.: Density matrix description of spin-selective radical pair reactions. Molecular Phys. 32, 1491–1493 (1976)CrossRefGoogle Scholar
  7. 7.
    Sverdlov, V., Weinbub, J., Selberherr, S.: Spin-dependent trap-assisted tunneling in magnetic tunnel junctions: a Monte Carlo study. In: Abstract Book International Workshop on Computational Nanotechnology, pp. 88–90 (2017)Google Scholar
  8. 8.
    Sverdlov, V.A., Korotkov, A.N., Likharev, K.K.: Shot noise suppression at two-dimensional hopping. Phys. Rev. B 63, 081302(R)1–4 (2001)Google Scholar

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for MicroelectronicsTU WienViennaAustria
  2. 2.Institute for MicroelectronicsTU WienViennaAustria

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