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Characterizations on Crystalline Structures and Defect Distributions

  • Ching-Hua SuEmail author
Chapter

Abstract

The crystalline structural quality of the grown crystals were examined by synchrotron white beam X-ray topography (SWBXT), high resolution triple axis X-ray diffraction (HRTXD) analysis, cathodoluminescence (CL) imaging and chemical etching. Two modes of SWBXT have been performed: (1) the transmission mode when the images of X-ray transmitted through a thin sample slab and (2) the reflection mode from the sample surface. Detailed topographs and HRTXD analyses have been performed on self-seeded grown ZnTe and ZnSe crystals as well as seeded grown ZnSe crystals. The major structural defects revealed on these vapor grown II–VI semiconductors were twins, subgrain boundary and dislocations. Chemical etching and cathodoluminescence revealed the density and shape of the dislocations in grown crystals of ZnSe, CdTe and CdS. The concentrations of impurities and dopants in the grown crystals were examined by Secondary Ion Mass Spectroscopy (SIMS) and Glow Discharge Mass Spectroscopy (GDMS) whereas the distributions of impurities and native point defects were mapped by photoluminescence (PL). The compositional distributions in the grown crystals of ternary ZnSeTe crystals were studied by wavelength dispersive X-ray spectroscopy (WDS), optical transmission measurements and precision density measurements.

Keywords

Synchrotron white beam X-ray topography (SWBXT) High resolution triple axis X-ray diffraction (HRTXD) Cathodoluminescence Secondary ion mass spectroscopy (SIMS) Glow discharge mass spectroscopy (GDMS) Photoluminescence (PL) 

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.HuntsvilleUSA

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