Advanced Radiation Sensors VLSI Design in CMOS Technology for High Energy Physics Applications

  • Tommaso CrociEmail author
  • Arianna Morozzi
  • Pisana Placidi
  • Daniele Passeri
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 627)


In this paper we discuss some issues related to the design, implementation and test of a CMOS Active Pixel Sensor. Two different pixel layout have been proposed based on a standard architecture to investigate the suitability of a 110 nm standard technology for the realization of small pixels, high granularity detectors to be used in High-Energy Physics, medical and space applications, such as particle tracking or beam monitoring.


Active Pixel Sensor CMOS Radiation sensor High energy physics applications 



This work was supported by the Department of Engineering (“Ricerca di Base” 2017 and 2018) and by the INFN (SEED and ARCADIA projects).


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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Tommaso Croci
    • 1
    Email author
  • Arianna Morozzi
    • 1
  • Pisana Placidi
    • 1
    • 2
  • Daniele Passeri
    • 1
    • 2
  1. 1.INFN-Section of PerugiaPerugiaItaly
  2. 2.Department of EngineeringUniversity of PerugiaPerugiaItaly

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