Advertisement

Advanced Radiation Sensors VLSI Design in CMOS Technology for High Energy Physics Applications

  • Tommaso CrociEmail author
  • Arianna Morozzi
  • Pisana Placidi
  • Daniele Passeri
Conference paper
  • 9 Downloads
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 627)

Abstract

In this paper we discuss some issues related to the design, implementation and test of a CMOS Active Pixel Sensor. Two different pixel layout have been proposed based on a standard architecture to investigate the suitability of a 110 nm standard technology for the realization of small pixels, high granularity detectors to be used in High-Energy Physics, medical and space applications, such as particle tracking or beam monitoring.

Keywords

Active Pixel Sensor CMOS Radiation sensor High energy physics applications 

Notes

Acknowledgements

This work was supported by the Department of Engineering (“Ricerca di Base” 2017 and 2018) and by the INFN (SEED and ARCADIA projects).

References

  1. 1.
    Villani EG et al (2005) Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 \(\upmu \)m CMOS technology. IEEE Trans Nucl Sci 52(3):752–755Google Scholar
  2. 2.
    Passeri D et al (2004) Design, fabrication, and test of CMOS active-pixel radiation sensors. IEEE Trans Nucl Sci 51:1144–1149ADSCrossRefGoogle Scholar
  3. 3.
    Wang T et al (2017) Development of a depleted monolithic CMOS sensor in a 150 nm CMOS technology for the ATLAS inner tracker upgrade. JINSTGoogle Scholar
  4. 4.
    LFoundry ‘LFOUNDRY TECHNOLOGY 110nm’ (Online). http://www.lfoundry.com/en/technology. Accessed 9 Sept 2019
  5. 5.
    Conti E et al (2013) Use of a CMOS image sensor for an active personal dosimeter in interventional radiology. IEEE Trans Instrum Meas 62(5):1065–1072CrossRefGoogle Scholar
  6. 6.
    Gao W et al (2018) Total-ionization-dose radiation-induced noise modeling and analysis of a \(2k \times 2k\) 4T CMOS active pixel sensor for space applications. IEEE Sens J 18(19):8053–8063ADSCrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Tommaso Croci
    • 1
    Email author
  • Arianna Morozzi
    • 1
  • Pisana Placidi
    • 1
    • 2
  • Daniele Passeri
    • 1
    • 2
  1. 1.INFN-Section of PerugiaPerugiaItaly
  2. 2.Department of EngineeringUniversity of PerugiaPerugiaItaly

Personalised recommendations