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Group III-Nitride-Based UV Laser Diodes

  • Tim WernickeEmail author
  • Luca Sulmoni
  • Christian Kuhn
  • Günther Tränkle
  • Markus Weyers
  • Michael Kneissl
Chapter
  • 225 Downloads
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 194)

Abstract

Recent progress in the development of deep ultraviolet lasers is reviewed as well as challenges for the heterostructure design and epitaxial growth for AlGaN-based laser diodes are discussed. The growth of AlN on sapphire and AlGaN heterostructures is reviewed and its impact on the performance characteristics of lasers in the UVC spectral range is presented. We achieve optically pumped AlGaN multiple quantum well (MQW) lasers near 270 nm with threshold power densities of less than 800 kW/cm2 and optically pumped AlGaN MQW lasers emitting at record shortest wavelength of 237 nm. We discuss critical stepping stones towards the development of current injection deep UV laser diodes including studies on Si- and Mg-doping of AlGaN with high aluminum mole fractions. n-Al0.8Ga0.2N cladding layers with resistances as low as 0.026 Ω cm are realized and UVC-transparent p-AlGaN cladding layers are developed. Finally, electroluminescence from current injection broad area UV laser diodes is demonstrated with maximum current densities of 4.7 kA/cm2. At the end, we provide an outlook of future prospect for deep UV laser diodes and discuss alternative approaches, e.g., electron beam pumping.

Notes

Acknowledgements

The authors would like to thank Sven Einfeldt, Carsten Netzel, Ute Zeimer, Jörg Jeschke, Anna Mogilatenko, Sylvia Hagedorn, and Arne Knauer (Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Berlin) as well as Martin Martens, Christoph Reich, Norman Susilo, Frank Mehnke, and Martin Guttmann (Institute of Solid State Physics, Technische Universität Berlin) for their contributions to this work. This work was supported by the German Federal Ministry of Education and Research (BMBF) within the “Advanced UV for Life” project and by the Deutsche Forschungsgemeinschaft (DFG) within the Collaborative Research Centre “Semiconductor Nanophotonics” (SFB 787).

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Tim Wernicke
    • 1
    Email author
  • Luca Sulmoni
    • 1
  • Christian Kuhn
    • 1
  • Günther Tränkle
    • 2
  • Markus Weyers
    • 2
  • Michael Kneissl
    • 1
    • 2
  1. 1.Institute of Solid State PhysicsTechnische Universität BerlinBerlinGermany
  2. 2.Ferdinand-Braun-Institut, Leibniz-Institut für HöchstfrequenztechnikBerlinGermany

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