Nitride Microcavities and Single Quantum Dots for Classical and Non-classical Light Emitters

  • G. Schmidt
  • C. Berger
  • A. DadgarEmail author
  • F. Bertram
  • P. Veit
  • S. Metzner
  • A. Strittmatter
  • J. Christen
  • S. T. Jagsch
  • M. R. Wagner
  • A. Hoffmann
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 194)


Microcavities with InGaN quantum wells or GaN-based quantum dots as active medium are building blocks of electrically-driven, low-threshold surface-emitting lasers or single photon emitters in the visible-to-UV spectral range. In this chapter, we highlight essential developments in epitaxial growth techniques of such nitride-based microcavities and their active regions. Modern analytical techniques for structural and optical characterization of these complex heterostructures as presented in this chapter are essential to solve remaining challenges.



We gratefully acknowledge the German Research Foundation (DFG) for financial support within the Research Instrumentation Program INST 272/148-1 and the Collaborative Research Center SFB 787 “Semiconductor Nanophotonics: Materials, Models, Devices”.

Many thanks to Silke Petzold (University of Magdeburg) for her work regarding the specimen preparation.


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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • G. Schmidt
    • 1
  • C. Berger
    • 1
  • A. Dadgar
    • 1
    Email author
  • F. Bertram
    • 1
  • P. Veit
    • 1
  • S. Metzner
    • 1
  • A. Strittmatter
    • 1
  • J. Christen
    • 1
  • S. T. Jagsch
    • 2
  • M. R. Wagner
    • 2
  • A. Hoffmann
    • 2
  1. 1.Institut für Physik, Otto-von-Guericke-Universität MagdeburgMagdeburgGermany
  2. 2.Institut für Festkörperphysik, Technische Universität BerlinBerlinGermany

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