Research on Combinatorial Feature of Total Ionizing Dose (TID) Effect on Interconnect
In mixed-mode simulation of this paper, the copper interconnect line structure in VDSM (very deep submicron) was connected to a circuit with the silica-based device (on-chip or inter-chip). A physical model of the mass transport of Cu interconnect is found based on the vacancy exchange mechanism based on a continuity equation on Cu diffusion including different TID ionizing dose settings of test. The TID failure tests are operated on interconnect and device samples, and the comparison between the model and literature shows that the simulation result is in accordance with the experiment data excellently (deviation <10%) at high electric field (beyond 2.5 MV/cm), small line space (90 nm) on the condition of different temperature, current density and line spaces. The electrical characters of interconnect lines with different width are simulated with the ISE. The numerical result of this model was in accordance with the data showed in literature and the experimental data. A number of research data contribute greatly to the study of sensitivity of the copper interconnect line and device, and find the method to enhance the anti-TID ability.
KeywordsMixed-Mode Cu interconnect Irradiation TID
The paper was supported by National Natural Science Foundation of China (Grant No 61171039). We also wish to thank KeJingda Electronic Co. Ltd. for preparing software.
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