Research on Combinatorial Feature of Total Ionizing Dose (TID) Effect on Interconnect

  • Xiaofei XuEmail author
  • Denghua Li
  • Shuhui Yang
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 1084)


In mixed-mode simulation of this paper, the copper interconnect line structure in VDSM (very deep submicron) was connected to a circuit with the silica-based device (on-chip or inter-chip). A physical model of the mass transport of Cu interconnect is found based on the vacancy exchange mechanism based on a continuity equation on Cu diffusion including different TID ionizing dose settings of test. The TID failure tests are operated on interconnect and device samples, and the comparison between the model and literature shows that the simulation result is in accordance with the experiment data excellently (deviation <10%) at high electric field (beyond 2.5 MV/cm), small line space (90 nm) on the condition of different temperature, current density and line spaces. The electrical characters of interconnect lines with different width are simulated with the ISE. The numerical result of this model was in accordance with the data showed in literature and the experimental data. A number of research data contribute greatly to the study of sensitivity of the copper interconnect line and device, and find the method to enhance the anti-TID ability.


Mixed-Mode Cu interconnect Irradiation TID 



The paper was supported by National Natural Science Foundation of China (Grant No 61171039). We also wish to thank KeJingda Electronic Co. Ltd. for preparing software.


  1. 1.
    Lifei, J., Lingling, S., Lei, Z.: Analysis the sensitivity of interconnect to process variation for 65 nm technology node. Chin. J. Electron Devices 31(3), 781 (2008)Google Scholar
  2. 2.
    Ming, D.: The study on the reliability and failure mechanism of copper interconnection in VDSM, Ph.D Thesis, Xi’an Xidian University, Xi’an (2010)Google Scholar
  3. 3.
    Zhiyuan, L., et al.: Analyzing influence of interconnect on performance for CMOS circuits. J. Nat. Sci. Heilongjiang Univ. 31(5) (2014)Google Scholar
  4. 4.
    Lloyd, J., Rodbell, K.P. (eds.): Reliability in Handbook of Semiconductor Interconnection Technology. Elsevier, New York (2006)Google Scholar
  5. 5.
    Hughes, H., Benedetto, J.: Radiation effects and hardening of MOS technology: devices and circuits. IEEE Trans. Nucl. Sci. 50(3), 500–521 (2003)CrossRefGoogle Scholar
  6. 6.
    McLain, M., Barnaby, H., Holbert, K., Schrimpf, R., Shah, H., Amort, A., Baze, M., Wert, J.: Enhanced TID susceptibility in sub-100 nm bulk CMOS I/O transistors and circuits. IEEE Trans. Nucl. Sci. 54(6), 2210–2217 (2007)CrossRefGoogle Scholar
  7. 7.
    Fleetwood, D., Eisen, H.: Total-Dose radiation hardness assurance. IEEE Trans. Nucl. Sci. 50(6), 552–563 (2003)CrossRefGoogle Scholar
  8. 8.
    Ceschia, M., Paccagnella, A., Cester, A., Scarpa, A., Ghidini, G.: Radiation induced leakage current and stress induced leakage currentin ultrathin gate oxides. IEEE Trans. Nucl. Sci. 45(6), 55, 2375–2382 (1998)Google Scholar
  9. 9.
    Ceschia, M., Paccagnella, A., Sandrin, S., Ghidini, G., Wyss, J., Lavalle, M., Flament, O.: Low field leakage current and soft breakdown in ultrathin gate oxides after heavy ions, electrons or X-ray irradiation. IEEE Trans. Nucl. Sci. 47(6), 552, 566–573 (2000)Google Scholar
  10. 10.
    Barnaby, J.: Total-Ionizing-Dose effects in modern CMOS technologies. IEEE Trans. Nucl. Sci. 53(6), 3103–3121 (2006)Google Scholar
  11. 11.
    Gerardin, S., Bagatin, M., Cester, A., Paccagnella, A., Kaczer, B.: Impact of heavy-ion strikes on minimum-size MOSFETs with ultrathin gate oxide. IEEE Trans. Nucl. Sci. 53(6), 3675–3680 (2006)CrossRefGoogle Scholar
  12. 12.
    Turowski, M., Raman, A., Schrimpf, R.: Nonuniform total-dose induced charge distribution in shallow-trench isolation oxides, IEEE Trans. Nucl. Sci. 5351(6), 3166–3171 (2004)Google Scholar
  13. 13.
    Jeung-Woo, K., Won-Sang, S., Sam-Young, K., Hyun-Soo, K., Hyun-Goo, J., Chae-Bog, L.: Characterization of Cu extrusion failure mode in dual-damascene Cu/Low-k interconnects under electro migration reliability test. In: Proceedings of 8th IPFA, pp. 174–177 (2001)Google Scholar

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.School of Electronic and Information EngineeringBeijing Jiaotong UniversityBeijingChina
  2. 2.School of Information EngineeringCommunication University of ChinaBeijingChina
  3. 3.School of AutomationBeijing Information Science and Technology UniversityBeijingChina

Personalised recommendations