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Research on Combinatorial Feature of Total Ionizing Dose (TID) Effect on Interconnect

  • Xiaofei XuEmail author
  • Denghua Li
  • Shuhui Yang
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 1084)

Abstract

In mixed-mode simulation of this paper, the copper interconnect line structure in VDSM (very deep submicron) was connected to a circuit with the silica-based device (on-chip or inter-chip). A physical model of the mass transport of Cu interconnect is found based on the vacancy exchange mechanism based on a continuity equation on Cu diffusion including different TID ionizing dose settings of test. The TID failure tests are operated on interconnect and device samples, and the comparison between the model and literature shows that the simulation result is in accordance with the experiment data excellently (deviation <10%) at high electric field (beyond 2.5 MV/cm), small line space (90 nm) on the condition of different temperature, current density and line spaces. The electrical characters of interconnect lines with different width are simulated with the ISE. The numerical result of this model was in accordance with the data showed in literature and the experimental data. A number of research data contribute greatly to the study of sensitivity of the copper interconnect line and device, and find the method to enhance the anti-TID ability.

Keywords

Mixed-Mode Cu interconnect Irradiation TID 

Notes

Acknowledgments

The paper was supported by National Natural Science Foundation of China (Grant No 61171039). We also wish to thank KeJingda Electronic Co. Ltd. for preparing software.

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.School of Electronic and Information EngineeringBeijing Jiaotong UniversityBeijingChina
  2. 2.School of Information EngineeringCommunication University of ChinaBeijingChina
  3. 3.School of AutomationBeijing Information Science and Technology UniversityBeijingChina

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