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Enhanced Efficiency of InGaN/GaN MQW Solar Cell by Applying Stress

  • Bilel ChouchenEmail author
  • Mohamed Hichem Gazzah
  • Hafedh Belmbrouk
Conference paper
  • 72 Downloads
Part of the Lecture Notes in Mechanical Engineering book series (LNME)

Abstract

With enhancements in the performance of photovoltaic solar cells, the InGaN/GaN multiple quantum wells have been considered as a very promising structure to improve the mechanism of carrier collection and hence the efficiency of conversion. The basic processes for the operation of a solar cell are the generation of electron-hole pairs, the recombination of these carriers into external circuits, and crucial step here is the generation of the electron-hole pairs. The piezoelectric charges induced by external stress generated at the InGaN and GaN interfaces induce an improvement of the electronic properties and the electrical parameters of the InGaN-MQW SC. Here, we demonstrate by a new numerical modeling self-consistent model coupled by the electrical parameters of cells, that the electronic properties and efficiency of conversion InGaN quantum wells SC have been improved by external stress. This study proves that the piezo-phototronic effect modulates the quantum photovoltaic device but also offers a great promise to maximize the use of solar energy in the current energy revolution.

Keywords

Solar cell Piezo-phototronic effect InGaN/GaN multiple quantum wells Electronic proprieties Conversion efficiency 

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Bilel Chouchen
    • 1
    Email author
  • Mohamed Hichem Gazzah
    • 1
  • Hafedh Belmbrouk
    • 2
    • 3
  1. 1.Quantum and Statistical Physics Laboratory, Faculty of Sciences of MonastirUniversity of MonastirMonastirTunisia
  2. 2.Electronics and Microelectronics Laboratory, Faculty of Science of MonastirUniversity of MonastirMonastirTunisia
  3. 3.Department of Physics, College of Science AlZulfiMajmaah UniversityAl ZulfiSaudi Arabia

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