Enhanced Efficiency of InGaN/GaN MQW Solar Cell by Applying Stress
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With enhancements in the performance of photovoltaic solar cells, the InGaN/GaN multiple quantum wells have been considered as a very promising structure to improve the mechanism of carrier collection and hence the efficiency of conversion. The basic processes for the operation of a solar cell are the generation of electron-hole pairs, the recombination of these carriers into external circuits, and crucial step here is the generation of the electron-hole pairs. The piezoelectric charges induced by external stress generated at the InGaN and GaN interfaces induce an improvement of the electronic properties and the electrical parameters of the InGaN-MQW SC. Here, we demonstrate by a new numerical modeling self-consistent model coupled by the electrical parameters of cells, that the electronic properties and efficiency of conversion InGaN quantum wells SC have been improved by external stress. This study proves that the piezo-phototronic effect modulates the quantum photovoltaic device but also offers a great promise to maximize the use of solar energy in the current energy revolution.
KeywordsSolar cell Piezo-phototronic effect InGaN/GaN multiple quantum wells Electronic proprieties Conversion efficiency
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