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Analog/RF CMOS

  • Badih El-Kareh
  • Lou N. Hutter
Chapter

Abstract

The trade-offs between parameters are different for digital, analog, and RF CMOS. In particular, there are conflicting requirements between analog and digital CMOS on operating voltage level, reduced low-frequency noise, high output resistance, low component mismatch, and high linearity. Thus, modifications must be made to the basic digital structure to satisfy analog circuit needs. In contrast, the characteristics of RF CMOS are essentially the same as those of high-speed digital CMOS so that both designs can be integrated on the same chip with little added complexity. In this chapter we first review the characteristics of the two-terminal MOS structure. This lays the groundwork for the discussion of MOSFET and CMOS characteristics in the sections that follow, with emphasis on key analog parameters. The chapter concludes with a review of mobility enhancement techniques, high-κ dielectrics, FinFETs, and fully depleted SOI MOSFETs and a brief discussion of analog CMOS applications.

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Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  • Badih El-Kareh
    • 1
  • Lou N. Hutter
    • 2
  1. 1.PIYECedar ParkUSA
  2. 2.Lou Hutter ConsultingDallasUSA

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