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Employment of SIC MOSFETS and GaN-Transistors for Wireless Power Transmission Systems

  • Rodion Saltanovs
  • Alexander KrainyukovEmail author
Conference paper
Part of the Lecture Notes in Networks and Systems book series (LNNS, volume 68)

Abstract

The paper is focusing on to the research of the possibility of using of SiC MOSFETs and GaN-transistors in wireless power transmission systems. To carry research eGaN EPC2034 transistors and SiC transistors C3M0065090J have been used, since these transistors have good frequency properties and small cases. The power inverter hybrid modules were created with chosen transistors. The frequency properties of modules of power inverters were researched when silicone oil was used for direct liquid cooling by of modules. The efficiency assessments is presented for the created modules.

Keywords

Power transistor Wireless power transmission Power inverter Power inverter efficiency Liquid cooling 

Notes

Acknowledgements

This paper has been published within the research project “Smart Engineering, Transport and Energy Competence Centre” project number: 1.2.1.1/16/A/008. “Development of hybrid circuit technology for high frequency power conversion modules using micro assembly”.

References

  1. 1.
    Shin, J.: Design and implementation of shaped magnetic resonance based wireless power transfer system for roadway-powered moving electric vehicles. IEEE Trans. Ind. Electron. 61(3), 1179–1192 (2014)Google Scholar
  2. 2.
    Imura, T., Okabe, H., Hori, Y.: Basic experimental study on helical antennas of wireless power transfer for electric vehicles by using magnetic resonant couplings. In: 2009 Proceedings of IEEE Vehicle Power Propulsion Conference, pp. 936–940 (2009)Google Scholar
  3. 3.
    Covic, G., Boys, J.: Modern trends in inductive power transfer for transportation applications. IEEE J. Emerg. Sel. Top. Power Electron. 1(1), 38–48 (2013)Google Scholar
  4. 4.
    Li, S., Mi, C.: Wireless power transfer for electric vehicle applications. IEEE J. Emerg. Sel. Top. Power Electron. 3(1), 4–17 (2015)Google Scholar
  5. 5.
    Wintrich, A., Nicolai, U., et al.: Application Manual Power Semiconductors, 466 p. SEMIKRON International, Ilmenau (2011)Google Scholar
  6. 6.
    Biela, J., Schweizer, M., Waffler, S.: SiC versus Si–evaluation of potentials for performance improvement of inverter and DC–DC converter systems by SiC power semiconductors. IEEE Trans. Ind. Electron. 58(7), 2872–2882 (2011)Google Scholar
  7. 7.
    Everts, J., Dasz, J., Van den Keybusx, J., et al.: GaN-based power transistors for future power electronic converters. In: PIEEE Benelux Young Researchers Symposium (YRS2010). https://lirias.kuleuven.be/handle/123456789/268624. Accessed 12 Sept 2018
  8. 8.
    C3M0065090J. Silicon Carbide Power MOSFET. https://www.wolfspeed.com/media/downloads/145/C3M0065090J.pdf. Accessed 18 Sept 2018
  9. 9.
    EPC2034—Enhancement Mode Power Transistor (2013). https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2034_datasheet.pdf. Accessed 1 Sept 2018
  10. 10.
    UCC27611. Texas Instruments. http://www.ti.com/lit/ds/symlink/ucc27611.pdf. Accessed 11 Sept 2018
  11. 11.
  12. 12.
    Advanced Cooling for Power Electronics. https://www.electronics-cooling.com/2017/07/advanced-cooling-power-electronics/. Accessed 2 Aug 2018
  13. 13.
    Boukhanouf, R., Haddad, A.: A CFD analysis of an electronics cooling enclosure for application in telecommunication systems. Appl. Therm. Eng. 30(16), 2426–2434 (2010)Google Scholar
  14. 14.

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.SIA “ElGoo Tech”JelgavaLatvia
  2. 2.Transportation and Telecommunication InstituteRigaLatvia

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