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Effect of Erbium Addition on Optical and Electrical Properties of Polytetrafluoroethylene

  • Abdelghafour El Moutarajji
  • Bouazza Tbib
  • Khalil El-HamiEmail author
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 912)

Abstract

Our aim focused on semiconductor materials based on polytetrafluoroethylene (PTFE) doped by various concentrations of Erbium element (Er). The materials have been characterized by X-ray diffraction, optical properties of materials have been studied by UV-visible spectroscopy and spectroscopy of Fourier transform infrared (FT-IR). Our results showed a change of direct cell parameters of samples and information on micro strain of samples. It has been found that the increase in the percentage absorbance of Erbium grafted on PTFE that resulted in the increasing the absorption coefficient α, electrical conductivity and gap energy.

Keywords

Semiconductor X-ray diffraction FTIR Optical properties Microstrain Electrical conductivity and gap energy 

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Abdelghafour El Moutarajji
    • 1
  • Bouazza Tbib
    • 1
  • Khalil El-Hami
    • 1
    Email author
  1. 1.Laboratory of Nanosciences and ModelingUniversity of Hassan 1st FPKKhouribgaMorocco

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