Effect of Erbium Addition on Optical and Electrical Properties of Polytetrafluoroethylene
Conference paper
First Online:
Abstract
Our aim focused on semiconductor materials based on polytetrafluoroethylene (PTFE) doped by various concentrations of Erbium element (Er). The materials have been characterized by X-ray diffraction, optical properties of materials have been studied by UV-visible spectroscopy and spectroscopy of Fourier transform infrared (FT-IR). Our results showed a change of direct cell parameters of samples and information on micro strain of samples. It has been found that the increase in the percentage absorbance of Erbium grafted on PTFE that resulted in the increasing the absorption coefficient α, electrical conductivity and gap energy.
Keywords
Semiconductor X-ray diffraction FTIR Optical properties Microstrain Electrical conductivity and gap energyReferences
- 1.Brabec, C.: Sol. Energy Mater. Sol. Cells 83, 273 (2004)CrossRefGoogle Scholar
- 2.Adamopoulos, G.: Electronic transport properties aspects and structure of polymer-fullerene based organic semiconductors for photovoltaic devices. Thin Solid Films 511–512, 371–376 (2006)CrossRefGoogle Scholar
- 3.Ouali, L., Krasnikov, V.V., Stalmach, U., Hadziioannou, G.: Adv. Mater. 11(18), 1515 (1999)CrossRefGoogle Scholar
- 4.Tauc, J. (ed.): Amorphous and Liquid Semiconductors. Plenum Press, London and New York (1974)Google Scholar
- 5.Demichelis, F., Kanidakis, G., Tagliferro, A., Tresso, E.: Appl. Opt. 9(26), 1737 (1987)CrossRefGoogle Scholar
- 6.Akl, A.A., Hassanien, A.S.: Microstructure characterization of Al-Mg alloys by X-ray diffraction line profile analysis. Int. J. Adv. Res. 2(11), 1–9 (2014)Google Scholar
- 7.Rama Rao, P., Anantharaman, T.R.: Z. Metallk 54, 658 (1963)Google Scholar
Copyright information
© Springer Nature Switzerland AG 2019