Advertisement

Technological Advances Towards 4H-SiC JBS Diodes for Wind Power Applications

  • Jonas BuettnerEmail author
  • Tobias Erlbacher
  • Anton Bauer
Conference paper
Part of the Lecture Notes in Electrical Engineering book series (LNEE, volume 573)

Abstract

Carefully designed 4H-SiC Junction Barrier Schottky diodes are capable of the low on-state losses and surge current ruggedness required to be employed as freewheeling diodes in wind turbine generators. Ion implantation is a crucial process step for the performance of such JBS diodes. To better understand the influence of the implantation on the forward characteristics, JBS and Schottky diodes were fabricated and characterized. The measurement data was compared with TCAD models. Monte Carlo simulations were used to accurately model the implantation including lateral straggling and channeling. The simulations show that the actual junction barrier spacing is reduced by 1 µm in the manufactured device compared to the intended spacing. Schottky region pinch-off which occurs at a spacing of less than 3 µm must be avoided.

Notes

Acknowledgements

This work was supported by the SPEED (Silicon Carbide Power Technology for Energy Efficient Devices) project funded by the European commission under PFP7-Grant #604057.

References

  1. 1.
    Seman, S., Niiranen, J., Virtanen, R., et al.: Low voltage ride-through analysis of 2 MW DFIG wind turbine - grid code compliance validations. Energy Society General Meeting, Pittsburgh, PA, USA (2008)CrossRefGoogle Scholar
  2. 2.
    Huang, X., Wang, G., Lee, M.-C., et al.: Reliability of 4H-SiC SBD/JBS diodes under repetitive surge current stress. In: 2012 IEEE Energy Conversion Congress and Exposition (ECCE), Raleigh, NC, USA (2012)Google Scholar
  3. 3.
    Huang, Y., Wachutka, G.: Comparative study of contact topographies of 4.5 kV SiC MPS diodes for optimizing the forward characteristics. In: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, Germany (2016)Google Scholar
  4. 4.
    Jiang, Y.F., Baliga, B.J., Huang, A.Q.: Influence of lateral straggling of implated aluminum ions on high voltage 4H-SiC device edge termination design. Mater. Sci. Forum 924, 361–364 (2018)CrossRefGoogle Scholar
  5. 5.
    Schoeck, J., Buettner, J., Rommel, M., et al.: 4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density. Mater. Sci. Forum 897, 427–430 (2017)CrossRefGoogle Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  1. 1.Fraunhofer Institute for Integrated Systems and Device Technology IISBErlangenGermany

Personalised recommendations