Comparison of Solar-Selective Absorbance Properties of TiN, TiNxOy, and TiO2 Thin Films
TiN, TiNxOy, and TiO2 thin films share many properties such as electrical, and optical properties. In this work, a comparison is made between TiN, TiNxOy, and TiO2 thin films deposited by RF magnetron sputtering (reactive sputtering) using the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time. In the case of TiNxOy thin film, oxygen is pumped in addition. TiO2 is obtained by annealing the sputtered TiN thin films, which were subsequently annealed at 800 °C for 2 h in air after sputtering. The optical properties of the thin films were characterized by a spectrophotometer, and Fourier-transform infrared spectroscopy (FTIR). The morphology and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that TiN and TiNxOy thin films have metal-like behaviour with some similarities in structure and microstructure and differences in optical absorbance. After annealing the TiN layer, the optical absorbance of the TiO2 is equal to 94% with a stable profile at ultraviolet, visible, and near infrared ranges.
KeywordsSelective absorber PVD sputtering Optical properties Microstructure TiN TiO2 TiNxOy
The authors thank the Center of Excellence, Nano Technology center in Egypt, and the Science & Technology Development Fund (STDF) of Egypt Project No. 10663.
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