Wettability Behavior of Si/C and Si–Sn Alloy/C System
During the Si growth process in the zone melting directional solidification experiment, the wettability behavior of Si source/solvent metal and solvent metal/seed substrate is an important issue for Si purification and growth. In this work, the wettability behavior of Si/C and Si-90 wt% Sn alloy/C system was studied by using the sessile drop method. The results show that Si and Si–Sn alloy wet C substrate, and the wettability gradually improves with the holding time due to the generation of a SiC layer in the metal/C interface and the infiltration Si or Si–Sn alloy into C substrate. Moreover, the addition of Sn into Si melt is beneficial for Si to wet C substrate, because Sn hinders the generation of SiC and Si promotes Sn wetting C substrate.
KeywordsWettability Si Si–Sn alloy C substrate
The authors are grateful for support from the National Science Foundation China (Grant No. 51334002, No. 51604023), Beijing Key Laboratory of Green Recycling and Extraction of Metals (GREM), the Laboratory of Green Process Metallurgy and Modeling (GPM2) and the High Quality steel Consortium (HQSC) at the School of Metallurgical and Ecological Engineering at University of Science and Technology Beijing (USTB).
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