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An Extraction Method of SiC Power MOSFET Threshold Voltage

  • W. JouhaEmail author
  • A. El Oualkadi
  • P. Dherbécourt
  • E. Joubert
  • M. Masmoudi
Conference paper
Part of the Advances in Science, Technology & Innovation book series (ASTI)

Abstract

Threshold voltage (\(V_{th}\)) is one of the most important electrical parameters in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) design, characterization, modeling, and simulation. The reduction of the threshold voltage increases the performance in terms of switching time for the power converter. The study of the evolution of \(V_{th}\) over time must be considered by the designers of the new generations of energy conversion systems. There are several existing methods for \(V_{th}\) extraction, and the aim of this chapter is to compare the commonly used MOSFET threshold voltage extraction methods and to propose a new method based on a physical approach. The extraction method proposed in this chapter is based on the static I–V measurements and the use of the Levenberg–Marquardt optimization algorithm. The implementation of the several extraction methods is tested and discussed by applying them to commercial components in order to evaluate their performance and validity in both the linear and saturation regions. The study is carried out for two generations of power SiC-MOSFETs of CREE constructor.

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Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • W. Jouha
    • 1
    • 2
    Email author
  • A. El Oualkadi
    • 2
  • P. Dherbécourt
    • 1
  • E. Joubert
    • 1
  • M. Masmoudi
    • 1
  1. 1.Normandy University, IUT, INSA Rouen, CNRSRouenFrance
  2. 2.LabTIC LaboratoryNational School of Applied Science of Tangier, Abdelmalek Essaadi UniversityTangierMorocco

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