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Design of Asymmetrical Doherty GaN HEMT Power Amplifiers for 4G Applications

  • Maryam Sajedin
  • Issa ElferganiEmail author
  • Abubakar Sadiq Hussaini
  • Jonathan Rodriguez
  • Ayman Radwan
  • Raed Abd-Alhameed
Conference paper
Part of the Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering book series (LNICST, volume 263)

Abstract

In this paper, a 2-stage Doherty power amplifier and a single class B at 3.800 GHz, based on a 10 W GaN-HEMT technology using the bandwidth up to 6 GHz have been designed. The Doherty structure employes a class B bias condition for the main and a class C configuration for the auxiliary devices in the Agilent’s ADS design platform. An uneven Wilkinson power divider is applied to deliver more power to the auxiliary device in order to achieve proper load modulation. The RF performances of the Doherty amplifier have been compared with those of a class B amplifier alone. The simulation results exhibit that the Doherty architecture can be considered as an ideal candidate for maximizing average efficiency while simultaneously maintaining amplifier linearity.

Keywords

Doherty amplifier Power amplifier High efficiency 

Notes

Acknowledgment

This work is supported by the European Union’s Horizon 2020 Research and Innovation program under grant agreement H2020-MSCA-ITN-2016-SECRET-722424.

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Copyright information

© ICST Institute for Computer Sciences, Social Informatics and Telecommunications Engineering 2019

Authors and Affiliations

  • Maryam Sajedin
    • 1
  • Issa Elfergani
    • 1
    Email author
  • Abubakar Sadiq Hussaini
    • 1
    • 2
  • Jonathan Rodriguez
    • 1
  • Ayman Radwan
    • 1
  • Raed Abd-Alhameed
    • 3
  1. 1.Instituto de TelecomunicaçõesAveiroPortugal
  2. 2.School of Information Technology and ComputingAmerican University of NigeriaYolaNigeria
  3. 3.Faculty of Engineering and InformaticsBradford UniversityBradfordUK

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