Modeling of Classical SOI MESFET

  • Iraj Sadegh Amiri
  • Hossein Mohammadi
  • Mahdiar Hosseinghadiry


This chapter focuses on analytical modeling of short-channel single-gate SOI MESFETs. In the beginning, we review the existing models presented for this device and explain the drawbacks related to each one. After that, using a new technique for solving of Poisson’s equation in the conductive channel, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.


Modeling Channel single-gate SOI MESFETs Poisson’s equation 


  1. 1.
    K.P. MacWilliams, J.D. Plummer, in Electron Devices Meeting, 1986 International. Complementary silicon MESFETs for VLSI (IEEE, 1986), pp. 403–406Google Scholar
  2. 2.
    P.E. Cottrell, R.R. Troutman, T.H. Ning, Hot-electron emission in n-channel IGFETs. IEEE J. Solid State Circuits 14, 442–455 (1979)CrossRefGoogle Scholar
  3. 3.
    E. Rimini, Ion Implantation: Basics to Device Fabrication (Springer, Berlin, 2013)Google Scholar
  4. 4.
    A. Chaudhry, Fundamentals of Nanoscaled Field Effect Transistors (Springer, Berlin, 2013)CrossRefGoogle Scholar
  5. 5.
    K.P. MacWilliams, J.D. Plummer, Device physics and technology of complementary silicon MESFET’s for VLSI applications. IEEE Trans. Electron Devices 38, 2619–2631 (1991)CrossRefGoogle Scholar
  6. 6.
    J.D. Marshall, J.D. Meindl, A sub- and near-threshold current model for silicon MESFETs. IEEE Trans. Electron Devices 35, 388–390 (1988)CrossRefGoogle Scholar
  7. 7.
    J. Nulman, J.V. Faricelli, J.P. Krusius, J. Frey, Fabrication and analysis of 1/2μm silicon logic MESFET’s. IEEE Trans. Electron Devices 30, 1395–1401 (1983)CrossRefGoogle Scholar
  8. 8.
    A.A. Orouji, Z. Ramezani, S.M. Sheikholeslami, A novel SOI-MESFET structure with double protruded region for RF and high voltage applications. Mater. Sci. Semicond. Process. 30, 545–553 (2015)CrossRefGoogle Scholar
  9. 9.
    S. Cristoloveanu, S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices (Springer, Berlin, 2013)Google Scholar
  10. 10.
    T. Houston, C. Everett, H. Darley, G. Taylor, in Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International. Silicon MESFET circuit performance for VLSI (IEEE, 1979), pp. 80–81Google Scholar
  11. 11.
    P.A. Tove, K. Bohlin, F. Masszi, H. Norde, J. Nylander, J. Tiren, U. Magnusson, Complementary Si MESFET concept using silicon-on-sapphire technology. Electron Device Lett. IEEE 9, 47–49 (1988)CrossRefGoogle Scholar
  12. 12.
    K.K. Young, Short-channel effect in fully depleted SOI MOSFETs. IEEE Trans. Electron Devices 36, 399–402 (1989)CrossRefGoogle Scholar
  13. 13.
    P. Pandey, B.B. Pal, S. Jit, A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs. IEEE Trans. Electron Devices 51, 246–254 (2004)CrossRefGoogle Scholar
  14. 14.
    M.A. Imam, M.A. Osman, A.A. Osman, Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects. Microelectron. Reliab. 39, 487–495 (1999)CrossRefGoogle Scholar
  15. 15.
    J.D. Marshall, J.D. Meindl, An analytical two-dimensional model for silicon MESFETs. IEEE Trans. Electron Devices 35, 373–383 (1988)CrossRefGoogle Scholar
  16. 16.
    T.K. Chiang, Y.H. Wang, M.P. Houng, Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET’s. Solid State Electron. 43, 123–129 (1999)CrossRefGoogle Scholar
  17. 17.
    K. Suzuki, S. Pidin, Short-channel single-gate SOI MOSFET model. IEEE Trans. Electron Devices 50, 1297–1305 (2003)CrossRefGoogle Scholar
  18. 18.
    S.K. Lahiri, A. DasGupta, I. Manna, M.K. Das, A quasi-3D analytical threshold voltage model of small geometry MOSFETs. Solid State Electron. 35, 1721–1727 (1992)CrossRefGoogle Scholar
  19. 19.
    K.F. Riley, M.P. Hobson, S.J. Bence, Mathematical Methods for Physics and Engineering: A Comprehensive Guide (Cambridge University Press, Cambridge, 2006)CrossRefGoogle Scholar
  20. 20.
    R.H. Yan, A. Ourmazd, K.F. Lee, Scaling the Si MOSFET: From bulk to SOI to bulk. IEEE Trans. Electron Devices 39, 1704–1710 (1992)CrossRefGoogle Scholar
  21. 21.
    A. Ortiz-Conde, F.J. García-Sánchez, J. Muci, A. Terán Barrios, J.J. Liou, C.-S. Ho, Revisiting MOSFET threshold voltage extraction methods. Microelectron. Reliab. 53, 90–104 (2013)CrossRefGoogle Scholar
  22. 22.
    T.K. Chiang, in 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET (2008), pp. 288–289Google Scholar
  23. 23.
    N. Lakhdar, F. Djeffal, A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs. J. Comput. Electron. 10, 382–387 (2011)CrossRefGoogle Scholar
  24. 24.
    S.P. Chin, P.D. Ching-Yuan Wu, A new two-dimensional model for the potential distribution of short gate-length MESFET's and its applications. IEEE Trans. Electron Devices 39, 1928–1937 (1992)CrossRefGoogle Scholar
  25. 25.
    C.T.M. Chang, T. Vrotsos, M.T. Frizzell, R. Carroll, A subthreshold current model for GaAs MESFET's. IEEE Electron Device Lett. 8, 69–72 (1987)CrossRefGoogle Scholar
  26. 26.
    A. Godoy, J.A. López-Villanueva, J.A. Jiménez-Tejada, A. Palma, F. Gámiz, A simple subthreshold swing model for short channel MOSFETs. Solid State Electron. 45, 391–397 (2001)CrossRefGoogle Scholar
  27. 27.
    B.-G. Park, in Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting, ed. by C.-M. Kyung (Springer, Dordrecht, 2016), pp. 3–31Google Scholar

Copyright information

© Springer Nature Switzerland AG 2019

Authors and Affiliations

  • Iraj Sadegh Amiri
    • 1
    • 2
  • Hossein Mohammadi
    • 3
  • Mahdiar Hosseinghadiry
    • 4
  1. 1.Computational Optics Research Group, Advanced Institute of Materials ScienceTon Duc Thang UniversityHo Chi Minh CityVietnam
  2. 2.Faculty of Applied SciencesTon Duc Thang UniversityHo Chi Minh CityVietnam
  3. 3.Pasargad Higher Education InstituteShirazIran
  4. 4.Allseas EngineeringDELFTThe Netherlands

Personalised recommendations