Chemical Vapour Deposition pp 215-269 | Cite as
Microstructure Evolution and Process Control
Abstract
A CVD process is very complex, many ignore chemical reactions and involves. To this day, it is still very difficult or impossible to identify the reactant species and reaction paths during a CVD process at high temperature by experimental methods. Meanwhile, various physical and chemical phenomena are involved in the deposition process. For a CVD process, these phenomena include [1]: (1) heat transfer from the heating element to the substrate to activate the chemical reactions, (2) mass transport in the bulk gas and boundary layer, (3) adsorption and migration of the reactant gaseous species on the surface of the substrate, as well as the desorption of the by-product gaseous species, and (4) solid product formation from the homogeneous and heterogeneous chemical reactions. Furthermore, the situation becomes much more complex because these phenomena are always interacting with each other.
Keywords
Computational Fluid Dynamic Chemical Vapour Deposition Microstructure Evolution Reaction Chamber Computational Fluid Dynamic AnalysisPreview
Unable to display preview. Download preview PDF.
References
- [1]Vignoles G, Goyheneche J, Sebastian P, Puiggali JR, Lines JF, Lachaud J, Delhaesc P, Trinquecostec M (2006) The film-boiling densification process for C/C composite fabrication: from local scale to overall optimization. Chem Eng Sci 61:5636–5653CrossRefGoogle Scholar
- [2]Spear KE, Dirkx RR (1990) Predicting the chemistry in CVD system. In: Besmann T M, Gallois B M (eds) Chemical vapour deposition of refractory metals and ceramics. Materials Research Society, Pittsburgh, PA, pp19–30Google Scholar
- [3]Kaiser N (2002) Review of the fundamentals of thin-film growth. Appl Opt 41:3053–3060CrossRefGoogle Scholar
- [4]Petrov I, Barna PB, Hultman L, Greene JE (2003) Microstructural elvolution during film growth. J Vac Sci Tech A21:S117–S128Google Scholar
- [5]Winand R (1994) Electrodeposition of metals and alloys-new results and perspectives. Electrochim Acta 39:1091–1105CrossRefGoogle Scholar
- [6]Landolt D (2002) Electrodeposition science and technology in the last quarter of the twentieth century. J Electrochem Soc 149:S9–S20CrossRefGoogle Scholar
- [7]Bauer E (1958) Phanomenologische theorie der kristallabecheidung an oberflachen, I-II. Z Kristallogr 110:372–394CrossRefGoogle Scholar
- [8]Bloem J (1980) Review: nucleation and growth of silicon by CVD. J Cryst Growth 50:581–604CrossRefGoogle Scholar
- [9]Movchan BA, Demchishin AV (1969) Investigations of the structure and properties of thick Ni, Ti, W, Al2O3 and ZrO2 vacuum condensates. Phys Met Metallogr (USSR) 28:83–90Google Scholar
- [10]Thornton JA (1977) High rate thick film growth. Annu Rev Mater Sci 7:239–260CrossRefGoogle Scholar
- [11]Thornton JA (1974) Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings. J Vac Sci Technol 11:666–669CrossRefGoogle Scholar
- [12]Hwang NM, Yoon DY (1994) Driving force for deposition in the chemical vapour deposition process. J Mater Sci Lett 13:1437–1439CrossRefGoogle Scholar
- [13]Lespoaux D, Langlais F, Naslain R (1995) Correlations between gas phase supersaturation, nucleation process and physico-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrate. J Mater Sci 30:1500–1510CrossRefGoogle Scholar
- [14]Bryant WA (1977) Review: the fundamentals of chemical vapour deposition. J Mater Sci 12:1285–1306CrossRefGoogle Scholar
- [15]Blocher JM (1974) Structure/property/process relationships in chemical vapour deposition CVD. J Vac Sci Technol 11:680–686CrossRefGoogle Scholar
- [16]Nakashima S, Matsunami H (eds) (1995) Silicon carbide and related materials. Institute of Physics, Bristol, UKGoogle Scholar
- [17]Wagner RS, Ellis WC (1964) Vapor-liquid-solid mechanism of single crystal growth. Appl Phys Lett 4:89–90CrossRefGoogle Scholar
- [18]Pan ZW, Xie SS, Chang BH et al. (1999) Direct growth of aligned open carbon nanotubes by chemical vapour deposition. Chem Phys Lett 299:97–102CrossRefGoogle Scholar
- [19]Motojima S, Ueno S, Hattori T, Goto K (1989) Growth of regularly coiled springlike fibers of Si3N4 by iron impurity-activated chemical vapor deposition. Appl Phys Lett 54:1001–1003CrossRefGoogle Scholar
- [20]Callister W d Jr (2007) Materials science and engineering: an introduction, 7th edn. Wiley, New YorkGoogle Scholar
- [21]Spencer MG ed, (1994) Silicon carbide and related materials. Institute of Physics, Bristol, UKGoogle Scholar
- [22]Nakashima S, Matsunami H (eds) (1995) Silicon carbide and related materials. Institute of Physics, Bristol, UKGoogle Scholar
- [23]Vahlas C, Caussat BG, Serp P (2006) Principles and applications of CVD powder technology. Mater Sci Eng R53:1–72CrossRefGoogle Scholar
- [24]Xu YD, Cheng LF, Zhang LT, Zhou WC (1999) Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperature and normal atmosphere. J Mater Sci 34:551–55CrossRefGoogle Scholar
- [25]Niihara K, Hirai T (1976) Chemical vapour-deposited silicon nitride: Part 1: Preparation and some properties. J Mater Sci 11:593–603CrossRefGoogle Scholar
- [26]Nicolis G, Prigogine I (1977) Self-organization in non-equilibrium systems. Wiley, New YorkGoogle Scholar
- [27]Messier R, Yehoda J E (1985) Geometry of thin-film morphology. J Appl Phys 58:3739–3746CrossRefGoogle Scholar
- [28]Coffin LF (1964) Structure-property relations for pyrolytic graphite. J Am Ceram Soc 47:473–478CrossRefGoogle Scholar
- [29]Komiyama H, Shimogaki Y, Egashira Y (1999) Chemical reaction engineering in the design of CVD reactors. Chem Eng Sci 54:1941–1957CrossRefGoogle Scholar
- [30]Saito T, Shimogaki Y, Egashira Y et al. (1992) Conformal deposition of WSix films on micron-sized trenches: the reactivity of film precursors. Appl Phys Lett 61:764–765CrossRefGoogle Scholar
- [31]Saito T, Oshima K, Shimogaki Y, Egashira Y, Komiyama H (1993) A kinetic study of CVD-WSix processes–the comparison of WF6/SiH4 and WF6/Si2H6 processes. In: Jensen K N, Cullen G W (eds) Proceedings of the 12th international conference on chemical vapour deposition. Honolulu, HI, Electrochemical Society. Pennington, NJ, pp238–243Google Scholar
- [32]Saito T, Shimogaki Y, Oshima K, Egashira Y, Sugawara K, Takahiro K, Nagata S, Yamaguchi S, Komiyama H (1994) Gas phase chemistry determining silicon contents in CVD WSix process. Materials Research Society Conference Proceedings 9. Advanced Metallization for ULSI Applications in 1994, pp475–479Google Scholar
- [33]Hong LS, Komiyama H (1991) Chemical vapor deposition of CuOx films by CuI and O2: role of cluster formation on film morphology. J Am Ceram Soc 74:1597–1604CrossRefGoogle Scholar
- [34]Huttinger KJ (1998) CVD in hot wall reactions-the interaction between homogeneous gas-phase and heterogeneous surface reactions. Chemical Vapor Deposition 4:151–158CrossRefGoogle Scholar
- [35]Huttinger KJ (2003) Fundamentals of chemical vapour deposition in hot wall reactors. In: P Delhaes (ed) Fibres and Composites. Taylor & Francis, London, pp75–86CrossRefGoogle Scholar
- [36]Benzinger W, Becker A, Huttinger KJ (1996) Chemistry and kinetics of chemical vapour deposition of pyrocarbon: I. Fundamentals of kinetics and chemical reaction engineering. Carbon 34: 957–966CrossRefGoogle Scholar
- [37]Ferona O, Langlaisa F, Naslaina R, Thebaultb J (1999) On kinetic and microstructural transitions in the CVD of pyrocarbon from propane. Carbon 37: 1343–1353CrossRefGoogle Scholar
- [38]Hu ZJ, Zhang WG, Huttinger KJ, Reznik B, Gerthsen D (2003) Influence of pressure, temperature and surface area/volume ratio on the texture of pyrolytic carbon deposited from methane. Carbon 41:749–758CrossRefGoogle Scholar
- [39]Thomas J M, Thomas W J (1997) Principles and practice of heterogeneous catalysis. VCH, WeinheimGoogle Scholar
- [40]Adamson AW, Gast AP (1997) Physical chemistry of surfaces. Wiley, New YorkGoogle Scholar
- [41]Lieberman ML, Pierson HO (1974) Effect of gas phase conditions on resultant matrix pyrocarbons in carbon/carbon composites. Carbon 23:233–241CrossRefGoogle Scholar
- [42]Delhaes P (2002) Chemical vapour deposition and infiltration processes of carbon materials. Carbon 40:641–657CrossRefGoogle Scholar
- [43]Watanabe K, Komiyama H (1990) Micro/macrocavity method applied to the study of the step coverage formation mechanism of SiO2 films by LPCVD. J Electrochem Soc 137:1222–1227CrossRefGoogle Scholar
- [44]Dutta S, Rice RW, Graham HC, Mendiratta MC (1980) Characterization and properties of controlled nucleation thermochemical deposition (CNTD)-silicon carbide. J Mater Sci 15:2183–2191CrossRefGoogle Scholar
- [45]Holzl RA (1980) Deposition method and products. US Patent 4,239,819Google Scholar
- [46]Bryant WA (1976) Producing extended area deposits of uniform thickness by a new chemical vapour deposition technique. J Cryst Growth 35:257–261CrossRefGoogle Scholar
- [47]Delhaes P (2002) Review: chemical vapor deposition and infiltration processes of carbon materials. Carbon 40:641–657CrossRefGoogle Scholar
- [48]Douglas JF, Gasiorek JM, Swasffield JA, Jack LB (2005) Fluid mechanics, 5th edn. Pearson, LondonGoogle Scholar
- [49]Munson BR, Young DF, Okiishi TH (2006) Fundamentals of fluid mechanics, 5th edn. Wiley, New YorkGoogle Scholar
- [50]Mironer A (1979) Engineering fluid mechanics. McGraw–Hill, New York, pp287–288Google Scholar
- [51]Ferziger JH, Peric M (2002) Computational methods for fluid dynamics, 3rd edn. Springer, Berlin Heidelberg New YorkMATHGoogle Scholar
- [52]Anderson JD Jr (1995) Computational fluid dynamics: the basics with applications. McGraw–Hill, New YorkGoogle Scholar
- [53]Bird RB, Stewart WE, Lightfoot EN (1960) Transport phenomena. Wiley, New YorkGoogle Scholar
- [54]Incropera FP, Dewitt DP, Bergman TL, Lavine AS (2007) Fundamentals of heat and mass transfer, 6th edn. Wiley, New YorkGoogle Scholar
- [55]Thomson WJ (2000) Introduction to transport phenomena. Prentice Hall, Engelwood Cliffs, NJGoogle Scholar
- [56]Berger M, Oliger J (1984) Adaptive mesh refinement for hyperbolic partial differential equations. J Comput Phys 53:484–512MATHCrossRefMathSciNetGoogle Scholar
- [57]Gunther M, Kværno A, Rentrop P (2001) Multirate partitioned Runge–Kutta methods. BIT 41:504–514CrossRefMathSciNetGoogle Scholar
- [58]Jensen KF (1993) Fundamentals of chemical vapour deposition. In: Hitchamn ML, Jensen KF (eds) Chemical vapour deposition: principles and applications. Academic, San Diego, CA, pp31–90Google Scholar
- [59]Fotiadis DI, Kieda S (1990) Transport phenomena in vertical reactors for metalorganic vapour phase epitaxy. J Cryst Growth 102:411–470Google Scholar
- [60]Fletcher R (1976) Conjugate gradient methods for indefinite systems. Lecture Notres in Mathematics, vol 506. Springer, Berlin Heidelberg New YorkGoogle Scholar
- [61]Golub GH, Van Loan C (1990) Matrix computations. Johns Hopkins University Press, Baltimore, MDGoogle Scholar