Gap States in Phosphorus-Doped a-Si:H

  • Kazunobu Tanaka
  • Hideyo Okushi
  • Satoshi Yamasaki
Chapter
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

The density-of-state distribution of gap states and their relevant defect structures in phosphorus-doped a-Si:H have been investigated by ICTS (isothermal capacitance transient spectroscopy), PAS (photoacoustic spectroscopy) and ESR measurements. Two broad peaks are observed in the gap-state profile; D− at 0. 52 eV below Ec, and *D− (D− coupled with P+ 4) at 0.6–0.8 eV above Ev. ESR hyperfine spectra of the specimen deposited at room temperature suggest the existence of deep unpaired-spin centers coupled with P nuclei. Photo-induced effect is discussed in terms of *D−-D− transformation and P-Si weak bond formation.

Keywords

Doping Level Amorphous Silicon Capture Cross Section Deep Level Transient Spectroscopy Dangling Bond 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1985

Authors and Affiliations

  • Kazunobu Tanaka
    • 1
  • Hideyo Okushi
    • 1
  • Satoshi Yamasaki
    • 1
  1. 1.Electrotechnical LaboratoryIbarakiJapan

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