On the Nature of Gap States in Hydrogenated Amorphous Silicon Alloys

  • Subhendu Guha
Chapter
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Study of localized states within the mobility gap of hydrogenated amorphous silicon alloys (a-Si:H) has received a great deal of attention in recent years. A simple energy distribution for the gap states was first suggested by Mott1 where, in addition to the band tails caused by disorder, as proposed by Cohen, Fritzsche and Ovshinsky2, there were states in the gap due to defects in the material. A specific defect center, namely a dangling bond, was proposed and it was suggested, depending on the occupancy, it may give rise to two bands separated by an appropriate correlation energy. Spear3 suggested that there could be other defects, e.g., divacancies, giving rise to states in the gap. Since a-Si:H alloys contain many impurities at the level of 1018cm−3 or higher4, these impurities may form complexes with the inherent defects and give rise to a wide distribution of gap states.

Keywords

Crystalline Silicon Dangling Bond Amorphous Semiconductor Wide Energy Range Band Tail 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1985

Authors and Affiliations

  • Subhendu Guha
    • 1
  1. 1.Energy Conversion Devices, Inc.TroyUSA

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