Mobility of Helium and Nitrogen Implanted at High Fluences into Solids, as Derived from their Concentration Profiles

  • D. Fink
  • L. Wang
  • J. Martan
Chapter
Part of the NATO ASI Series book series (NSSB, volume 279)

Abstract

It has recently been shown that the depth profiles of gases such as N and He broaden with increasing high fluence, after implantation into metals at high energies. Those depth profiles can be well simulated by an analytic approach, which assumes simultaneous implantation and radiation induced mobility of the implants. A universal relation is derived for the depth profile broadening as a function of the average implanted concentration. The comparison of simulated and measured distributions yields numerical values for the radiation induced diffusion coefficient of the implanted gas as a function of the fluence. Remarkable differences are found for both He and N mobilities. Measured changes of these depth profiles by thermal annealing are compared to results of a diffusion simulation program which includes trapping and detrapping at radiation induced defects. For all high fluence He and N implanted samples, the thermal gas mobility shows rapid onset at some specific temperatures, in contrast to samples implanted at low fluences. For He implanted systems, it was possible to identify several stages of gas release from He/defect clusters. The He and N depth profile shapes change with temperature in different manners, which may be understood by different atomistic migration mechanisms.

Keywords

Depth Profile High Fluence Profile Width Neutron Depth Profile Fluence Dependence 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • D. Fink
    • 1
  • L. Wang
    • 1
  • J. Martan
    • 2
  1. 1.Hahn-Meitner InstitutBerlin 39Germany
  2. 2.Instytut Technologii ElektronowejPolitechniki WroclawskiejWroclawPoland

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