Abstract
Several techniques have been developed over the past decade using near-field effects to obtain high-resolution microscopic images and surface microanalysis. These techniques are referred to as scanning probe microscopies (SPM). In each of these microscopies, a sharpened probe is used to measure a specific interaction between the probe and the surface of interest. The instrument which began this new and expanding field of microscopy is the scanning tunneling microscope (STM) invented in 1981 by Binnig, Rohrer, and coworkers (1982a–c). The STM measures the electronic interaction between a conductive or semiconductive probe and sample which allows the direct imaging of geometric and electronic surface structure with atomic resolution. Several reviews of the STM literature have been published (Golovchenko, 1986; Hansma and Tersoff, 1987; Binnig and Rohrer, 1987; Kuk and Silverman, 1989; Demuth et al., 1988; Griffith and Kochanski, 1990).
Keywords
Beam Splitter Scan Probe Microscopy Scanning Electron Microscope Tunneling Current Vibration IsolationPreview
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References
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