The Nanoindentation Response of Silicon and Related Structurally Similar Materials

  • Sarah V. Hainsworth
  • Andrew J. Whitehead
  • Trevor F. Page
Chapter

Abstract

The first plastic response of silicon during indentation experiments is a structural densification process which occurs by the action of the high hydrostatic component of the contact stress fields on the relatively open, diamond-cubic crystal structure. This behaviour was originally observed during microhardness tests and results in changes in electrical resistivity which were correlated with amorphisation to the metallic state occurring (an insulator-metal transition)1, 2. Recently this phenomenon has been widely observed during ultra-low load indentation (nanoindentation) experiments on single crystal silicon where the load-displacement-stiffness and time are continuously monitored e. g.3–11. In these tests there is a characteristic ‘reverse thrust’ or ‘kick-back’ duirng the unloading cycle (e. g. Page et al 3 and Figure 2 later).

Keywords

Critical Resolve Shear Stress Densification Process Silicon Sample Dislocation Slip Spherical Indenter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • Sarah V. Hainsworth
    • 1
  • Andrew J. Whitehead
    • 2
  • Trevor F. Page
    • 1
  1. 1.Materials Division, Department of Mechanical, Materials and Manufacturing EngineeringThe University of NewcastleNewcastle upon TyneUK
  2. 2.De Beers Industrial Diamond Division Ltd.Charters, Sunninghill, AscotUK

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