Analog Transistors

  • Juras Požela
Chapter
Part of the Microdevices book series (MDPF)

Abstract

Analog transistors are a variety of vertical field-effect transistors (Fig. 8.1) in which the gate is fabricated in the shape of a grid (lattice). The operating speed of an analog transistor is determined by how quickly electrons travel the short distance from the source (cathode) to the drain (anode) past the thin gate (grid). The analog transistor is the design analog of a vacuum triode in which the evacuated space has been replaced by a semiconductor.

Keywords

Barrier Height Gallium Arsenide Bipolar Transistor Drain Voltage Current Gain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Y. Watanabe and J. Nishizawa, Japanese Patent 205068: Published No. 28-6077 (Fig. 15): Application Date Dec, 1950.Google Scholar
  2. 2.
    W. Shockley, “Transistor electronics: Imperfections, unipolar and analog transistors,” Froc. IRE, 40, No. 11, 1289–1313 (1952).CrossRefGoogle Scholar
  3. 3.
    R. Zuleeg, “A silicon space-charge-limited triode and analog transistor,” Solid-State Electron., 10, No. 5, 449–460 (1967).ADSCrossRefGoogle Scholar
  4. 4.
    S. Teszner and B. R. Gicquel, “Gridistor — a new field-effect device,” Froc. IEEE, 52, No. 12, 1502–1513 (1964).CrossRefGoogle Scholar
  5. 5.
    C. O. Bozler, G. D. Alley, R. A. Murphy, et al., “The permeable base transistor,” Proc. 7th Biennial Cornell Electrical Engineering Conf. (1979), p. 33.Google Scholar
  6. 6.
    C. A. Mead, “Operation of tunnel-emission devices,” J. Appl. Phys., 32, No. 4, 646–652 (1961).ADSCrossRefGoogle Scholar
  7. 7.
    J. Nishizawa, T. Terasaki, and J. Shibata, “Field-effect transistor versus analog transistor (static induction transistor),” IEEE Trans. Electron Dev., ED-22, No. 4, 185–197 (1975).CrossRefGoogle Scholar
  8. 8.
    J. Nishizawa, “Recent progress and potential of SIT,” in: Proc. 11th Intern. Conf. on Solid State Devices, Tokyo, 1979, Jpn. J. Appl Phys., 19, Suppl. 19-1, 3–11 (1980).Google Scholar
  9. 9.
    I. Bencuya, A. Cogan, S. Butler, et al., “Static induction transistors optimized for high-voltage operation and high microwave power output,” IEEE Trans. Electron Dev., ED-32, No. 7, 1321–1327 (1985).ADSCrossRefGoogle Scholar
  10. 10.
    T. Shino et al., “2 GHz, high power silicon SITs,” Jpn. J. Appl. Phys., 19, No. 3, 283 (1980).Google Scholar
  11. 11.
    J. Nishizawa and K. Nonaka, “Current amplification in nonhomogeneous-base structure and static induction transistor structure,” J. Appl. Phys., 57, No. 10, 4783–4797 (1985).ADSCrossRefGoogle Scholar
  12. 12.
    Y. Nakamura, H. Tadano, M. Takigawa, et al., “Experimental study on current gain of BSIT,” IEEE Trans. Electron Dev., ED-33, No. 6, 810–815 (1986).CrossRefGoogle Scholar
  13. 13.
    J. Nishizawa, K. Nonaka, and T. Tamamushi, “A very high sensitivity phototransistor structure,” Int. J. Infrared Millimeter Waves, 6, No. 8, 649–673 (1985).ADSCrossRefGoogle Scholar
  14. 14.
    J. Nishizawa, T. Tamamushi, and S. Suzuki, “SIT image converter,” in: Japan Annual Reviews in Electronics, Computers and Telecommunications, J. Nishizawa (ed.), Vol. 8: Semiconductor Technologies, Ohmsha, LTD, and North-Holland, Tokyo (1983), pp. 219-242.Google Scholar
  15. 15.
    J. Nishizawa, K. Nonaka, and T. Tamamushi, “Static induction thyristor,” in: Japan Annual Reviews in Electronics, Computers and Telecommunications, J. Nishizawa (ed.), Vol. 13: Semiconductor Technologies, Ohmsha, LTD, and North-Holland, Tokyo (1984), pp. 89-120.Google Scholar
  16. 16.
    K. Motoya and J. Nishizawa, “TUNNETT,” Int. J. Infrared Millimeter Waves, 6, No. 7, 483–495 (1985).ADSCrossRefGoogle Scholar
  17. 17.
    J. Nishizawa, “The GaAs TUNNETT diodes,” Int. J. Infrared Millimeter Waves, 5, No. 4, 215–216 (1982).MathSciNetGoogle Scholar
  18. 18.
    C. O. Bozler and G. D. Alley, “The permeable-base transistor and its application to logic circuits,” Proc. IEEE, 70, No. 1, 46–52 (1982).ADSCrossRefGoogle Scholar
  19. 19.
    C. O. Bozler and G. D. Alley, “Fabrication and numerical simulation of the permeable-base transistor,” IEEE Trans. ElectronDev., ED-27, No. 6, 1128–1141 (1980).ADSCrossRefGoogle Scholar
  20. 20.
    N. P. Economou, “Development of the technology base for advanced devices and circuits,” Proc. IEEE, 71, No. 5, 601–611 (1983).ADSCrossRefGoogle Scholar
  21. 21.
    Y. Takanashi, H. Asai, S. Ando, et al., “Microwave performance of GaAs PBTs fabricated from MO-CVD wafers,” Jpn. J. Appl. Phys., 25, No. 2, 111–113 (1986).ADSCrossRefGoogle Scholar
  22. 22.
    G. D. Alley, C. O. Bozler, A. R. Calawa, et al., “Millimeter-wave length GaAs permeable-base transistor,” presented at Device Research Conf., Fort Collins, CO, June, 1982.Google Scholar
  23. 23.
    G. D. Alley, “High-voltage two-dimensional simulations of permeable-base transistors,” IEEE Trans. Electron Dev., ED-30, No. 1, 52–60 (1983).ADSCrossRefGoogle Scholar
  24. 24.
    M. A. Osman, D. H. Navon, T. W. Tang, et al., “Improved design of the gallium arsenide permeable-base transistor,” IEEE Trans. Electron Dev., ED-30, No. 10, 1348–1354 (1983).ADSCrossRefGoogle Scholar
  25. 25.
    G. D. Alley, C. O. Bozler, N, P. Economou, et al., “Millimeter-wave-length GaAs permeable-base transistors,” IEEE Trans. Electron Dev., ED-29, No. 10, 1708 (1982).CrossRefGoogle Scholar
  26. 26.
    X. C. Zhu, X. N., Zhang, A. Van der Ziel, et al., “Noise in permeable-base transistors,” Physica, 129B, 573–577 (1985).Google Scholar
  27. 27.
    A. Gopinath and J. B. Rankin, “Effect of doping profile variations on the performance of the permeable base transistors,” IEEE Trans. Electron Dev., ED-33, No. 6, 816–821 (1986).ADSCrossRefGoogle Scholar
  28. 28.
    C. Hwang* D. H. Navon, and T. Tang, “Monte Carlo simulation of the GaAs permeable-base transistor,” IEEE Trans. Electron Dev., ED-34, No. 2, 154–159 (1987).Google Scholar
  29. 29.
    N. A. Bannov, V. I. Ryzhii, and G. Yu. Khrenov, “Numerical modeling of electron processes in submicron permeable-base field-effect transistors,” FTP, 21, No. 3, 500–503 (1987).Google Scholar
  30. 30.
    V. A. Vojak and G. D. Alley, “A comparison of etched-geometry and overgrown silicon permeable-base transistors by two-dimensional numerical simulations,” IEEE Trans. Electron Dev., ED-30, No. 8, 877–883 (1983).ADSCrossRefGoogle Scholar
  31. 31.
    K. Ishibashi and S. Furukawa, “SPE-CoSi2 submicrometer lines by lift-off using selective reaction and its application to a permeable-base transistor,” IEEE Trans. Electron Dev., ED-33, No. 3, 322–327 (1986).ADSCrossRefGoogle Scholar
  32. 32.
    D. D. Rathman, N. P. Economou, D. J. Silversmith, et al., “The microwave silicon permeable base transistor,” IEEE Int. Electron. Dev. Meet. Tech. Dig., Dec, 1983.Google Scholar
  33. 33.
    W. R. Frensley, B. Bayraktaroglu, S. E. Campbell, et al., “Design and fabrication of a GaAs vertical MESFET,” IEEE Trans. Electron Dev., ED-32, No. 5, 952–956 (1985).CrossRefGoogle Scholar
  34. 34.
    A. Gruhle, L. Vescan, and H. Beneking, “Dual-gate silicon permeable-base transistors built on LPVPE-grown material,” Electron. Lett., 23, No. 9, 447–449 (1987).CrossRefGoogle Scholar
  35. 35.
    G. Glastre, E. Rosencher, F. Arnaud d’Avitaya, et al., “CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable-base transistor,” Appl. Phys. Lett., 52, No. 11, 898–900 (1988).ADSCrossRefGoogle Scholar
  36. 36.
    J. P. Spratt, R. F. Schwarz, and W. M. Kane, “Hot electrons in metal films: injection and collection,” Phys. Rev. Lett., 6, No. 7, 341–342 (1961).ADSCrossRefGoogle Scholar
  37. 37.
    M. Heiblum, “Tunneling hot electron transfer amplifiers (THETA): amplifiers operating up to infrared,” Solid-State Electron., 24, No. 4, 343–366 (1981).ADSCrossRefGoogle Scholar
  38. 38.
    E. Rosencher, S. Delage, Y. Campidelli, et al., “Transistor effect in monolithic Si-CoSi2-Si epitaxial structures,” Electron. Lett., 20, No. 19, 762–764 (1984).ADSCrossRefGoogle Scholar
  39. 39.
    J. C. Hensel, A. F. J. Levi, R. T. Tung, et al., “Transistor action in Si/CoSi2/Si heterostructures,” Appl Phys. Lett., 47, No. 2, 151–153 (1985).ADSCrossRefGoogle Scholar
  40. 40.
    E. Rosencher, S. Delage, F. Arnaud d’Avitaya, et al., “Realisation and electrical properties of a monolithic metal-base transistor: the Si/CoSi2/Si structure,” Physica, 134B, 106–110 (1985).Google Scholar
  41. 41.
    R. Abdeshaah and K. L. Wang, “Transport study in Si-silicide-Si transistors using a Monte Carlo technique,” IEEE Tram. Electron Dev., ED-31, No. 12, 1701–1707 (1984).ADSCrossRefGoogle Scholar
  42. 42.
    S. M. Sze and H. K. Gummel, “Appraisal of semiconductor-metal-semiconductor transistor,” Solid-State Electron., 9, No. 8, 751–769 (1966).ADSCrossRefGoogle Scholar
  43. 43.
    S. Delage, P. A. Badoz, E. Rosencher, et al., “Electrical characterization of epitaxially overgrown Si in Si〈111〉/CoSi2/Si metal base transistor,” Electron. Lett., 22, No. 4, 207–209 (1986).ADSCrossRefGoogle Scholar
  44. 44.
    R. T. Tung, A. F. J. Levi, and J. M. Gibson, “Control of a natural permeable CoSi2-base transistor,” Appl. Phys. Lett., 48, No. 10, 635–637 (1986).ADSCrossRefGoogle Scholar
  45. 45.
    J. C. Hensel, “Operation of the Si/CoSi2/Si heterostructure transistor,” Appl. Phys. Lett., 49, No. 9, 522–524 (1986).ADSCrossRefGoogle Scholar
  46. 46.
    J. Lindmayer, “The metal-gate transistor,” Proc. IEEE, 52, No. 12, 1751–1752 (1964).CrossRefGoogle Scholar
  47. 47.
    G. F. Derkits, J. P. Harbison, J. Levkoff, et al., “Transistor action in novel GaAs/W/GaAs structures,” Appl. Phys. Lett., 48, No. 18, 1220–1222 (1986).ADSCrossRefGoogle Scholar
  48. 48.
    T. Kobayashi, H. Sakai, and M. Tonouchi, “Monolithic superconductor-base hot-electron transistors with large current gain,” Electron. Lett., 22, No. 12, 659–661 (1986).ADSCrossRefGoogle Scholar
  49. 49.
    M. Tonouchi, H. Sakai, and T. Kobayashi, “Superconductor-base hot-electron transistor. I. Theory and design,” Jpn. J. Appl. Phys., 25, No. 5, 705–710 (1986).ADSCrossRefGoogle Scholar
  50. 50.
    H. Sakai, Y. Kurita, M. Tonouchi, and T. Kobayashi, “Superconductor-base hot-electron transistor. II. Fabrication and electrical measurements,” Jpn. J. Appl. Phys., 25, No. 6, 835–840 (1986).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1993

Authors and Affiliations

  • Juras Požela
    • 1
  1. 1.Institute of Semiconductor PhysicsLithuanian Academy of SciencesVilniusLithuania

Personalised recommendations