X-Ray Scattering from Self-Organized Structures

Abstract

A promising method for fabricating low-dimensional systems is based on processes of self-organization taking place during epitaxial growth under suitable growth conditions. In contrast to the lithographically based techniques, the self-organization method can pattern large areas of the substrate (even whole substrate wafers) and it is also less time-consuming. The disadvantage of this method lies in its statistical nature. Resulting arrays of nano-objects are not exactly periodic and homogeneous. In this context, x-ray methods as tools for the investigation of the structure quality of the arrays are of extraordinary importance.