The DAMOCLES Monte Carlo Device Simulation Program

  • Steven E. Laux
  • Massimo V. Fischetti
Chapter
Part of the The Springer International Series in Engineering and Computer Science book series (SECS, volume 113)

Abstract

The DAMOCLES program (Device Analysis using Monte Carlo et Poisson solver) brings together an advanced Monte Carlo transport model where carriers move in a self-consistent electric field, and a flexible representation of the two-dimensional device geometry and doping. The result is a single simulation code capable of treating a multitude of device types (MOSFET, MESFET, Bipolar, HEMT) and semiconductors (electrons in Si, Ge, unstrained SiGe, GaAs, InP, A1As, InAs, GaP, AlGaAs, InGaAs, GaInP; holes in Si). An associated interactive graphics package facilitates the interpretation of the simulation results.

For purposes of this workshop, rather that dwell on our accomplishments and successes, we chose rather to summarize our work in the area of Monte Carlo device simulation, and then focus on some failures and work in progress.

Keywords

Bipolar Transistor Device Simulation Boltzmann Transport Equation Velocity Overshoot Flexible Represen 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • Steven E. Laux
    • 1
  • Massimo V. Fischetti
    • 1
  1. 1.IBM Research DivisionT. J. Watson Research CenterYorktown HeightsUSA

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