Acoustoelectric Characterization of Wide Gap II-VI Semiconductors in the Case of Bipolar Photoconduction

  • Josef Rosenzweig
Chapter
Part of the NATO ASI Series book series (NSSB, volume 200)

Abstract

The purpose of the present article is to demonstrate that acousto-electric methods may be used to characterize piezoelectric semiconductors in the case of bipolar photoconduction. The wide gap II–VI semiconductor CdTe is used as an example for this characterization method.

Keywords

Generation Rate Sound Wave Hall Effect Applied Electric Field Inversion Point 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • Josef Rosenzweig
    • 1
  1. 1.Institut für angewandte PhysikUniversität KarlsruheKarlsruheFed. Rep. of Germany

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