Indication for an Ionization Damage Process in Light Ion Irradiation Damage in Silicon

  • H. J. Pabst
  • D. W. Palmer
Chapter

Abstract

Rutherford backscattering channeling experiments analysed in the framework of single scattering theory, taking into account the effects of flux peaking, lattice location of defects (through de-channeling cross section), and number of scattering centres per defect, indicate defect introduction rates for 300 keV H+ and 275 keV He+ in the ratio 1 to 2 which is similar to the electronic stopping power ratio but differs considerably from Kinchin and Pease predictions (ratio 1 to 20). A multiple ionization damage process is proposed.

Keywords

Ionization Cross Section Auger Recombination Yield Change Close Pair Random Path 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Recent review: H. J. Stein in Radiation Effects in Semiconductors, Ed. J. W. Corbett, G. D. Watkins, Gordon and Breach, 1971; p. 125.Google Scholar
  2. [2]
    Recent review: G. D. Watkins in Radiation Damage and Defects in Semiconductors, Conference Series No. 16, The Institute of Physics, 1972; p. 228.Google Scholar
  3. [3]
    Recent review: F. L. Vook in Radiation Damage and Defects in Semiconductors; Conference Series No. 16, The Institute of Physics, 1972; p. 60.Google Scholar
  4. [4]
    Recent review: W. L. Brown in Radiation Damage and Defects in Semiconductors; Conference Series No. 16, The Institute of Physics, 1972; p. 416.Google Scholar
  5. [5]
    H. J. Pabst, Thesis, 1973, University of Sussex.Google Scholar
  6. [6]
    G. D. Watkins in Radiation Damage in Semiconductors, Ed. P. Baruch, Paris, Dunod, 1964, p. 97.Google Scholar
  7. [7]
    D. van Vliet, Rad. Eff. 10, 137 (1971)ADSGoogle Scholar
  8. [7a]
    J. U. Andersen, O. Andreasen, J. A. Davies, E. Uggerhøj, Rad. Eff. 7, 25 (1971).ADSCrossRefGoogle Scholar
  9. [8]
    H. J. Pabst, D. W. Palmer in Radiation Damage and Defects in Semiconductors, Conference Series No. 16, The Institute of Physics, 1972, p. 438.Google Scholar
  10. [9]
    H. J. Pabst, this conference.Google Scholar
  11. [10]
    G. H. Kinchin, R. S. Pease, Rep. Progr. Phys. 18, 1 (1955).ADSCrossRefGoogle Scholar
  12. [11]
    B. L. Gregory, C. E. Barnes in Radiation Effects in Semiconductors, Ed. F. L. Vook, Plenum Press, 1968, p. 124.Google Scholar
  13. [12]
    P. Baruch, F. Abel, C. Cohen, M. Bruneaux, D. W. Palmer, H. J. Pabst in Radiation Effects in Semiconductors, Ed. J. W. Corbett, G. D. Watkins; Gordon and Breach, 1971, p. 147.Google Scholar
  14. 113]
    K. Morita, N. Itoh, J. of the Physics Soc. of Japan 30, 1430 (1971).ADSCrossRefGoogle Scholar
  15. [14]
    F. H. Eisen, private communication.Google Scholar
  16. [15]
    S. Miyagawa, K. Morita, N. Matsunami, K. Tachibana, N. Itoh, Rad. Eff. 13, 271 (1972).CrossRefGoogle Scholar
  17. [16]
    J. H. Barrett, Phys. Rev. B3, 1527 (1971).ADSGoogle Scholar
  18. [17]
    S. B. Fisher, P. C. Banbury in Atomic Collision Phenomena in Solids, Ed. D. W. Palmer, M. W. Thompson, P. D. Townsend; North-Holland 1970; p. 232.Google Scholar
  19. [18]
    J. Kistemaker, Comment after [17], p. 244.Google Scholar
  20. [19]
    J. D. Garcia, Phys. Rev. A1, 280 (1970) and Phys. Rev. A 3, 955 (1971).ADSCrossRefGoogle Scholar
  21. [20]
    F. W. Saris, Thesis, Leiden 1971.Google Scholar
  22. [21]
    Nakashime, Y. Innshi, Radiation Effects in Semiconductors, Ed., F. L. Vook, Plenum Press, 1968, p. 124.Google Scholar
  23. [22]
    A. Seeger, K. P. Chik, Phys. Stat. Sol. 29, 455 (1968).ADSCrossRefGoogle Scholar
  24. [23]
    F. H. Eisen, B. Welch, J. E. Westmoreland, J. W. Mayer, Collision Phenomena in Solids, Eds., D. W. Palmer, M. W. Thompson, P. D. Townsend, North-Holland 1970, p. 111.Google Scholar
  25. [24]
    H. J. O. Varley, J. Phys. Chem. Solids 23, 985 (1962).ADSCrossRefGoogle Scholar
  26. [25]
    M. A. Zaikovskaya, A. E. Kiv, O. R. Niyazova, Phys. Stat. Sol. (a)3, 99–104 (1970)ADSCrossRefGoogle Scholar
  27. [25a]
    M. A. Zaikovskaya, A. E. Kiv, O. R. Niyazova, and Phys. Stat. Sol. (a)8, K133–135 (1971).ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1975

Authors and Affiliations

  • H. J. Pabst
    • 1
  • D. W. Palmer
    • 1
  1. 1.School of Mathematical and Physical SciencesUniversity of SussexFalmer, Brighton, SussexEngland

Personalised recommendations