Mechanism of Γ-X Electron Transfer in Type II (Al)GaAs/AlAs Superlattices and Multiple Quantum well Structures
In the conduction band of III-V semiconductors having cubic zinc-blende structure there are local energetic minima at the Γ, X and L points of the Brillouin zone. The idea that electrons in the conduction band are scattered by phonons between these valleys first became important in theories of the Gunn effect[1,2]. In recent years the intervalley scattering process has been extensively investigated in III–V semiconductors  mainly because of two reasons: first, ultrafast optical spectroscopy became available for investigating scattering processes which take place on a femtosecond timescale. Secondly, the transport properties of high-speed electronic semiconductor devices are influenced by intervalley scattering.
KeywordsGaAs Layer Conduction Band State Valence Band State AlAs Layer Intervalley Scattering
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- 14.The values for m and n have been determined by double crystal X-ray diffractionGoogle Scholar