Ion Beam Surface Layer Analysis pp 149-161 | Cite as
Analyzing the Formation of a thin Compound Film by Taking Moments on Backscattering Spectra
Abstract
The use of backscattering in the analysis of compound formation in a thin-film reaction becomes difficult when the thickness of the compound layer is comparable to the depth resolution of the instrument. This paper describes a method of circumventing this difficulty by using the change that takes place in the moment of the distribution of a given element. The growth of the compound layer is proportional to the square root of the change of moment between a reacted sample and an unreacted one. Alternative analytic methods are discussed, and an empirical cubic correction is found to give results in good agreement with those obtained by the moment method. The formation kinetics of a thin film of Pd2Si is taken as an example.
Keywords
Compound Layer Scatter Cross Section Compound Formation Moment Method Moment CalculationPreview
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