Novel Selection Rules in Resonant Raman Scattering from GaAs Quantum Wells

  • J. E. Zucker
  • A. Pinczuk
  • D. S. Chemla
  • A. Gossard
  • W. Weigmann
Conference paper

Abstract

Raman scattering resonant with quasi-two dimensional excitons in GaAs-AlGaAs quantum well heterostructures has revealed optical vibrations and electron-phonon interactions significantly different from those in bulk GaAs.

Keywords

Bulk GaAs Transverse Optical Raman Tensor Resonant Raman Scattering Heavy Hole Exciton 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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References

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    R. Dingle, W. Wiegmann, and C. H. Henry, Pliys. Rev. Lett. 33, 82 (1974).ADSGoogle Scholar
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    J. E. Zuclcer, A. Pinczult, D. S. Chemia, A. Gossard, and W. Wiegmann, Phys. Rev. Lett. 51, 1293 (1983).ADSCrossRefGoogle Scholar
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    M. Cardona, in Light Scattering in Solids II (Springer-Verlag, Heidelberg, 1982).CrossRefGoogle Scholar
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    J. E. Zuclcer, A. Pinczult, D. S. Chemia, A. Gossard, and W. Wiegmann, submitted for publication.Google Scholar

Copyright information

© Springer Science+Business Media New York 1985

Authors and Affiliations

  • J. E. Zucker
    • 1
  • A. Pinczuk
    • 2
  • D. S. Chemla
    • 2
  • A. Gossard
    • 3
  • W. Weigmann
    • 3
  1. 1.Columbia UniversityNew YorkUSA
  2. 2.AT&T Bell LaboratoriesHolmdelUSA
  3. 3.AT&T Bell LaboratoriesMurray HillUSA

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