Recombination Dynamics of Near-Bandedge Emission in Cubic GaN

  • R. Klann
  • O. Brandt
  • H. Yang
  • H. T. Grahn
  • K. H. Ploog
Chapter

Abstract

The recent realization of GaN light-emitting diodes has motivated the quest for a GaN-based laser1, 2. Compared to the commonly investigated hexagonal structure, the cubic phase of GaN offers several significant advantages, in particular when grown on GaAs: For example cleavage is readily obtained, which is important for the fabrication of a laser resonator. An essential prerequisite for determining the actual potential of this material for laser devices is the quantitative understanding of the processes dominating carrier relaxation and recombination.

Keywords

Excitation Density Recombination Dynamics Streak Tube Nonradiative Decay Channel Picosecond Dynamic 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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Copyright information

© Springer Science+Business Media New York 1996

Authors and Affiliations

  • R. Klann
    • 1
  • O. Brandt
    • 1
  • H. Yang
    • 1
  • H. T. Grahn
    • 1
  • K. H. Ploog
    • 1
  1. 1.Paul-Drude-Institut für FestkörperelektronikBerlinGermany

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